DATA SHEET OF IC 317
Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
Text: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,
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77106
Abstract: CRACK DETECTION PATTERNS HM628128 reliability test data cbv 2 10910 statistical Physics Hitachi DSA00503
Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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Untitled
Abstract: No abstract text available
Text: SIE MM^baOB 001ÖÖ57 ISS • H I T 2 D HM5116100 Series Preliminary 16,777,216-Word x 1-Bit Dynamic Random Access Memory ■ H IT A C H I/ d e s c r ip t io n LO G IC/ARR AYS/flEM HM5116100J Senes The Hitachi HM5116100 is a CMOS dynamic RAM organized 16,777,216-word x
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HM5116100
216-Word
HM5116100J
TTP-20D
TTP-20DR
54aax
787l0
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Untitled
Abstract: No abstract text available
Text: HM5116100 S e rie s - Preliminary 16,777,216-Word x 1-Bit Dynamic Random A c ce s s Memory • DESCRIPTION HM5116100J Series The Hitachi HM5116100 is a C M O S dynamic RAM organized 16,777,216-word x 1-bit. It employs the most advanced C M O S technology for high performance and
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HM5116100
216-Word
HM5116100J
ns/70
ns/80
ns/100
mW/440
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Untitled
Abstract: No abstract text available
Text: blE D • 4 4 ^ 5 0 3 DG2371b ÔT3 ■ H I T ? H B 56A 168 S e r ie s HITACHI/ l ogi c / arrays / heii 16,777,216-Word x 8-Bit High Density Dynamic RAM Module The H B56A 168 is a 16 M x8 dynam ic RAM m odule, m ounted 8 pieces o f 16-Mbit DRAM HM5116100J sealed in SOJ package. An outline
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DG2371b
216-Word
16-Mbit
HM5116100J)
HB56A168
30-pin
HB56A168AT-6
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z10-130
Abstract: HM5116100 Hitachi Scans-001
Text: 243 - 16M m £ ífc & WiEicBj rc TRAC CMOS D y n a m i c X i y ¿i- y y # ns) TRCY min (ns) TCAD min (ns) TAH rain (ns) TP rain (ns) RAM ( 1 6, m tt T*CY min (ns) TDH rain (ns) TRWC V D D or VC C (ns) (V) 7 7 7, m I DD max (mA) 216x1 ) A I DD STANDBY I SB/ I S82)
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216x1)
28P1N
M5116100J/Z/TT/RR-10
4K/64
1W5116100J/Z/TT/RR-6
IM5116100J/Z/TT/RR-3
4K/25S
UPM217100-70
2K/32
UPD4217100-80
z10-130
HM5116100
Hitachi Scans-001
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flash 32 Pin PLCC 16mbit
Abstract: 398x
Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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Untitled
Abstract: No abstract text available
Text: b l E D • 4 ^ i , 2 0 3 H M 5116100 S e r i e s - 0 0 2 3 3 2 b O i l ■ H I T S HITACHI/ «-o ì i c / arrays / be * 16,777,216-w ord x 1 -b it D yn a m ic R andom A c c e s s M em ory The H itachi H M 5116100 is a CMOS dynamic RAM organized 16,777,216 words x 1 bit. It
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216-w
HM5116100J-6
HM5116100J-7
HM5116100J-8
400-mil
24/28-pin
CP-24DA)
HM5116100Z-6
HM51161002-7
HM5116100Z-8
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CBV2
Abstract: 27x10
Text: Reliability o f Hitachi IC Memories 1. Structure IC m em ory devices are classified as N M O S type, C M O S type, and B i-C M O S type. T here are advantages to it's circuit design, layout pattern, degree o f integration, and m anufacturing process. A ll H itachi m em ories are produced using standardized design, m anufacturing, and inspection techniques.
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CBV2
Abstract: hitachi ic thyristor TT 570 N Reliability of Hitachi IC Memories
Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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Untitled
Abstract: No abstract text available
Text: H M 5116100 S e r ie s - Preliminary 16,777,216-Word x 1-Bit Dynamic Random A c ce s s Memory • DESCRIPTION H M 5U 6100J Series T h e H itachi H M 5 1 16 10 0 is a C M O S dyn am ic R A M org an ized 16,777,216-w ord x 1-bit. It em ploys the m ost a d v a n ce d C M O S technolog y for high perform a n ce and
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HM5116100
216-Word
216-w
6100J
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