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    HGTG20N50C1D Price and Stock

    Renesas Electronics Corporation HGTG20N50C1D

    - Bulk (Alt: HGTG20N50C1D)
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    Avnet Americas HGTG20N50C1D Bulk 4 Weeks 48
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    • 100 $7.526
    • 1000 $7.314
    • 10000 $7.102
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    Harris Semiconductor HGTG20N50C1D

    26A, 500V, UFS SERIES N-Channel IGBT WITH ANTI-PARALLEL HYPERFAST DIODE '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTG20N50C1D 208 1
    • 1 $7.74
    • 10 $7.74
    • 100 $7.27
    • 1000 $6.58
    • 10000 $6.58
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    HGTG20N50C1D Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HGTG20N50C1D Harris Semiconductor 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode Original PDF
    HGTG20N50C1D Intersil 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode Original PDF

    HGTG20N50C1D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G20N50c

    Abstract: g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254
    Text: HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance


    Original     		PDF HGTG20N50C1D O-247 500ns 150oC. G20N50c g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254

    G20N50c

    Abstract: g20n50c1d mosfet 20a 300v g20n50 ic tb 810 datasheet HGTG20N50C1D g20N50c1 HGTG20N50 20A igbt an7254
    Text: HGTG20N50C1D S E M I C O N D U C T O R 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE


    Original     		PDF HGTG20N50C1D O-247 500ns 150oC. AN7254 AN7260) 150oC 100oC G20N50c g20n50c1d mosfet 20a 300v g20n50 ic tb 810 datasheet HGTG20N50C1D g20N50c1 HGTG20N50 20A igbt

    PJ 969 diode

    Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
    Text: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode


    OCR Scan     		PDF 500ns HGTG20N50C1D O-247 AN7254 AN7260) PJ 969 diode G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V

    PJ 969 diode

    Abstract: DIODE 25PH 500 M302E71 pj 809 HGTG20N50C1D 08/bup 3110 transistor
    Text: HARRIS SEMICOND SECTOR ffl j a r s 1 bêE D • Lt30SE71 00502Ö3 732 ■ H A S HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 20 Amp, 500 Volt • Latch Free Operation


    OCR Scan     		PDF t30SE71 HGTG20N50C1D O-247 500ns AN7254 AN7260) M302E71 QD50S67 PJ 969 diode DIODE 25PH 500 pj 809 HGTG20N50C1D 08/bup 3110 transistor

    HGTH20N40E1D

    Abstract: TO218AC HGTG20N50 TO-220AB 5-lead IGBT Guide
    Text: HARRIS IGBT PRODUCT LINE Selection Guide IGBTs CO HARRIS IGBT PRODUCT LINE Continued 1. Icm = maximum continuous current rating at Tc = +90°C. 2. ICM = maximum pulsed current rating. 3. tp measured at Tc = +150°C. Selection Guide SHADING Indicates DEVELOPMENTAL PRODUCTS


    OCR Scan     		PDF O-220AB HGTP6N40E1D HGTP10N40F1D HGTP10N40E1D HGTP10N40C1D HGTH12N40E1D HGTH12N40C1D HGTH20N40E1D HGTH20N40C1D HGTP6N50E1D TO218AC HGTG20N50 TO-220AB 5-lead IGBT Guide

    igbt 400V 20A

    Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V
    Text: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .


    OCR Scan     		PDF HGTD6N40E1, HGTD6N50E1, HGTD10N40F1, HGTD10N50F1, HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, HGTM12N60D1 HGTP12N60D1 HGTH20N40C1, igbt 400V 20A igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
    Text: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .


    OCR Scan     		PDF HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, HGTH12N40C1, HGTP10N40C1D, HGTP10N40E1D, TRANSISTOR BIPOLAR 400V 20A igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40