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    H649A Search Results

    H649A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    H649A Shantou Huashan Electronic Devices Low Frequancy Power Amplifier Original PDF

    H649A Datasheets Context Search

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    H649A

    Abstract: H649 Huashan
    Text: P NP S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H649A █ LOW FREQUANCY POWER AMPLIFIER █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃


    Original     		PDF H649A O-126ML -180V -160V -150mA -500mA -500mA, -50mA -10mA, -160V, H649A H649 Huashan

    transistor 649A

    Abstract: H649A 649a HS649A H649 transistor 160v 1.5a pnp 2SB649A
    Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 649A 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A117AJ-00 芯片厚度：240±20µm 管芯尺寸：1170x1170µm 2 焊位尺寸：B 极 272×192µm 2；E 极 226×298µm 2


    Original     		PDF 100mm A117AJ-00 2SB649AHS649AH649A O-126TO-126ML -180V -160V transistor 649A H649A 649a HS649A H649 transistor 160v 1.5a pnp 2SB649A

    transistor 649A

    Abstract: H649A 649A H649 HS649A 2SB649A transistor 160v 1.5a pnp A080BJ-00
    Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 649A 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A080BJ-00 芯片厚度：240±20µm 管芯尺寸：800x800µm 2 焊位尺寸：B 极 124×124µm 2；E 极 221×110µm 2


    Original     		PDF 100mm A080BJ-00 2SB649AHS649AH649A O-126TO-126ML -180V -160V transistor 649A H649A 649A H649 HS649A 2SB649A transistor 160v 1.5a pnp A080BJ-00