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    onsemi H11G1M

    OPTOISO 4.17KV DARL W/BASE 6DIP
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    DigiKey H11G1M Tube 2,776 1
    • 1 $1.18
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    • 1000 $0.3841
    • 10000 $0.32314
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    Avnet Americas H11G1M Bulk 2,535 15 Weeks 1
    • 1 $0.21738
    • 10 $0.20259
    • 100 $0.19216
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    H11G1M Bulk 17 Weeks 1
    • 1 $1.01
    • 10 $0.534
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    H11G1M Bulk 7 Weeks, 4 Days 1
    • 1 $1.01
    • 10 $0.534
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    Mouser Electronics H11G1M 1,599
    • 1 $0.97
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    Newark H11G1M Bulk 1,674 1
    • 1 $0.425
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    H11G1M Bulk 999 1
    • 1 $0.121
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    H11G1M Bulk 1
    • 1 $0.933
    • 10 $0.656
    • 100 $0.472
    • 1000 $0.371
    • 10000 $0.326
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    RS H11G1M Bulk 2 Weeks 10
    • 1 -
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    Onlinecomponents.com H11G1M 4,950
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    • 100 $0.3594
    • 1000 $0.3249
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    TME H11G1M 235 1
    • 1 $0.787
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    Avnet Silica H11G1M 16 Weeks 1,000
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    EBV Elektronik H11G1M 17 Weeks 1,000
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    Master Electronics H11G1M 4,950
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    New Advantage Corporation H11G1M 6,750 1
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    Wuhan P&S H11G1M 2,000 1
    • 1 $0.84
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    onsemi H11G1SR2M

    OPTOISO 4.17KV DARL W/BASE 6SMD
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    DigiKey H11G1SR2M Digi-Reel 1,691 1
    • 1 $1.19
    • 10 $0.735
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    • 1000 $0.41362
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    H11G1SR2M Cut Tape 1,691 1
    • 1 $1.19
    • 10 $0.735
    • 100 $1.19
    • 1000 $0.41362
    • 10000 $0.41362
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    Avnet Americas H11G1SR2M Reel 15 Weeks 3,000
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    • 10000 $0.312
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    H11G1SR2M Reel 15 Weeks 3,000
    • 1 -
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    • 10000 $0.2737
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    Mouser Electronics H11G1SR2M 44
    • 1 $1.17
    • 10 $0.705
    • 100 $0.456
    • 1000 $0.364
    • 10000 $0.302
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    Newark H11G1SR2M Reel 1,000
    • 1 $0.417
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    Onlinecomponents.com H11G1SR2M
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    TME H11G1SR2M 1
    • 1 $0.727
    • 10 $0.429
    • 100 $0.351
    • 1000 $0.351
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    Avnet Silica H11G1SR2M 16 Weeks 1,000
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    EBV Elektronik H11G1SR2M 17 Weeks 1,000
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    Isocom Components H11G1XSMT-R

    6PIN DARLINGTON OUTPUT, HIGH VOL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H11G1XSMT-R Digi-Reel 1,000 1
    • 1 $1.66
    • 10 $1.026
    • 100 $0.6709
    • 1000 $0.52142
    • 10000 $0.52142
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    H11G1XSMT-R Cut Tape 1,000 1
    • 1 $1.66
    • 10 $1.026
    • 100 $0.6709
    • 1000 $0.52142
    • 10000 $0.52142
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    H11G1XSMT-R Reel 1,000 1,000
    • 1 -
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    • 100 -
    • 1000 $0.37899
    • 10000 $0.375
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    Isocom Components H11G1XG

    6PIN DARLINGTON OUTPUT, HIGH VOL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H11G1XG Tube 65 1
    • 1 $1.58
    • 10 $0.976
    • 100 $1.58
    • 1000 $0.49067
    • 10000 $0.36844
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    NAC H11G1XG Tube 2,080
    • 1 $0.532
    • 10 $0.532
    • 100 $0.532
    • 1000 $0.532
    • 10000 $0.3584
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    Isocom Components H11G1XSM

    6PIN DARLINGTON OUTPUT, HIGH VOL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H11G1XSM Tube 65 1
    • 1 $1.58
    • 10 $0.976
    • 100 $1.58
    • 1000 $0.49067
    • 10000 $0.36844
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    NAC H11G1XSM Tube 2,600
    • 1 $0.532
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    H11G1 Datasheets (44)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H11G1 Fairchild Semiconductor 6-Pin DIP High Voltage Photodarlington Output Optocoupler Original PDF
    H11G1 Fairchild Semiconductor High Voltage Photodarlington Optocoupler Original PDF
    H11G1 Isocom Components 3V, 60mA high voltage darlington output optically coupled isolator Original PDF
    H11G1 Motorola 6-Pin DIP Optoisolators Darlington Output(On-Chip Resistors) Original PDF
    H11G1 General Instrument 100 V, high voltage photodarlington optocoupler Scan PDF
    H11G1 Isocom Components Optoelectronics Data Book 1996 Scan PDF
    H11G1 Motorola Switchmode Datasheet Scan PDF
    H11G1 Motorola European Master Selection Guide 1986 Scan PDF
    H11G1 Motorola Optoelectronics Device Data 1988 Scan PDF
    H11G1 QT Optoelectronics HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPERS Scan PDF
    H11G1300 Fairchild Semiconductor 6-Pin DIP High Voltage Photodarlington Output Optocoupler Original PDF
    H11G1300 Fairchild Semiconductor HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLER Original PDF
    H11G1300W Fairchild Semiconductor 6-Pin DIP High Voltage Photodarlington Output Optocoupler Original PDF
    H11G1300W Fairchild Semiconductor HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLER Original PDF
    H11G13S Fairchild Semiconductor 6-Pin DIP High Voltage Photodarlington Output Optocoupler Original PDF
    H11G13S Fairchild Semiconductor HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLER Original PDF
    H11G13SD Fairchild Semiconductor 6-Pin DIP High Voltage Photodarlington Output Optocoupler Original PDF
    H11G13SD Fairchild Semiconductor HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLER Original PDF
    H11G1G Isocom Components HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR Original PDF
    H11G1M Fairchild Semiconductor High Voltage Photodarlington Optocouplers Original PDF

    H11G1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    H11G1 datasheet

    Abstract: H11G1 H11G3 H11G2 Photodarlington
    Text: Optoelectronics Products High Voltage Photodarlington Output with integral base-emitter resistor ; DC Sensing Input Part Number CTR @10 mA IF (%) Min BVCEO(V) BVCBO(V) BVEBO(V) tON/tOFF(µs) Max Min Min Min Max VISOACRMS (kV)1 minute 6-Pin Package H11G1 1000


    Original
    H11G1 H11G2 H11G3 H11G1 datasheet H11G1 H11G3 H11G2 Photodarlington PDF

    h11g1 case 730c-04

    Abstract: H11GX 1N4004 H11G1 H11G2 H11G3 motorola 1n4004
    Text: MOTOROLA Order this document by H11G1/D SEMICONDUCTOR TECHNICAL DATA H11G1 * [CTR = 1000% Min] GlobalOptoisolator H11G2* 6-Pin DIP Optoisolators Darlington Output On-Chip Resistors The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs optically coupled to silicon photodarlington detectors which have integral


    Original
    H11G1/D H11G1 H11G2* H11G1, H11G2 H11G3 H11G3 H11Ging h11g1 case 730c-04 H11GX 1N4004 H11G1 motorola 1n4004 PDF

    H11G2M

    Abstract: No abstract text available
    Text: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon


    Original
    H11G1M, H11G2M, H11G3M H11GXM H11G1M H11G2M E90700, H11G2M PDF

    H11G1

    Abstract: H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M H11G1M H11G1SM fairchild logic
    Text: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon


    Original
    H11G1M, H11G2M, H11G3M H11GXM H11G1M H11G2M E90700, H11G1 H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M H11G1M H11G1SM fairchild logic PDF

    H11GX

    Abstract: H11G1 datasheet H11G2 H11G1 H11G3
    Text: HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1 H11G2 H11G3 DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor


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    H11G1 H11G2 H11G3 H11GX E90700 00045A H11G1 datasheet H11G2 H11G1 H11G3 PDF

    H11G1

    Abstract: H11G1M H11G1SM H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M
    Text: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon


    Original
    H11G1M, H11G2M, H11G3M H11GXM H11G1M H11G2M E90700, H11G1 H11G1M H11G1SM H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M PDF

    H11G2

    Abstract: H11G1 E91231 H11G1X H11G3 Diode smd code sm
    Text: H11G1, H11G2, H11G3 H11G1X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS UL recognised, File No. E91231 Package Code " JJ " 'X' SPECIFICATIONAPPROVALS H11G1X VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802


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    H11G1, H11G2, H11G3 H11G1X E91231 H11G1X DB92008 H11G2 H11G1 E91231 H11G3 Diode smd code sm PDF

    H11GX

    Abstract: H11G1 H11G2 H11G3
    Text: HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1 H11G2 H11G3 DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor


    Original
    H11G1 H11G2 H11G3 H11GX E90700 H11G1 H11G2 H11G3 PDF

    H11GX

    Abstract: H11G1M H11G1SM H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M
    Text: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers tm Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon


    Original
    H11G1M, H11G2M, H11G3M H11GXM H11G1M H11G2M E90700, H11GX H11G1M H11G1SM H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M PDF

    E91231

    Abstract: H11G1 H11G1X H11G2 H11G2X H11G3 H11G3X
    Text: H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form Dimensions in mm 2.54 7.0 6.0


    Original
    H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 E91231 DB92008m-AAS/a1 E91231 H11G1 H11G1X H11G2 H11G2X H11G3 H11G3X PDF

    Untitled

    Abstract: No abstract text available
    Text: H11G1, H11G2, H11G3 H11G1X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS z UL recognised, File No. E91231 Package Code " JJ " 'X' SPECIFICATIONAPPROVALS z H11G1X VDE 0884 in 3 available lead form:- STD - G form - SMD approved to CECC 00802


    Original
    H11G1, H11G2, H11G3 H11G1X E91231 H11G1X DB92008m-AAS/A5 PDF

    E91231

    Abstract: H11G1 H11G1X H11G2 H11G2X H11G3 H11G3X
    Text: H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS VDE 0884 in 2 available lead forms : - STD - G form Dimensions in mm 2.54 7.0 6.0 l


    Original
    H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 E91231 DB92008-AAS/A1 E91231 H11G1 H11G1X H11G2 H11G2X H11G3 H11G3X PDF

    H11G1

    Abstract: H11G1X H11G2 H11G2X H11G3 H11G3X E91231
    Text: H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form Dimensions in mm 2.54 7.0 6.0


    Original
    H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 E91231 DB92008m-AAS/a1 H11G1 H11G1X H11G2 H11G2X H11G3 H11G3X E91231 PDF

    h11q

    Abstract: H11Q2 H11U
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE UL CSA <D ® ® 8ET1 H11G1* H11G2* H11G3 8 EMKO DEMKO NEMKO [CTR • 1000% Min] GlobalOptdsolfttor 6 -Pin DIP Optoisolators Darlington Output On-Chip Resistors The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs


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    H11G1, H11G2 H11G3 H11G1* H11G2* H11G3 H11G1 H11G1 H11Gx h11q H11Q2 H11U PDF

    5h11g

    Abstract: h11g1 case 730c-04 GE H11G1 11G 1
    Text: MOTOROLA O rder th is docum ent by H11G1/D SEMICONDUCTOR TECHNICAL DATA ® éh T O VDE UL CSA SETI SEMKO DEMKO NEMKO G lob a lO ptoiso la to r 6-Pin DIP Optoisolators Darlington Output On-Chip Resistors T he H11G1, H11G 2 and H11G 3 d e vices co n sist o f ga lliu m arse nid e IREDs


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    H11G1/D H11G1, H11G1* H11G2* H11G3 5h11g h11g1 case 730c-04 GE H11G1 11G 1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA H11G1 H11G2 H11G3 6-Pin DIP Optoisolators Darlington Output . . . c o n s is ts o f g alliu m -arse n id e IR E D s o p tically co u p led to s ilic o n p ho to darlin g ton d etec­ to rs w h ich h ave integral b ase-em itter resisto rs. T h e on-chip re sisto rs im p ro ve h ig h er


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    H11G1 H11G2 H11G1, H11G2, H11G3 PDF

    Untitled

    Abstract: No abstract text available
    Text: [sO HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS i I -I H11G1 H11G2 PACKAGE DIMENSIONS DESCRIPTION The H11G1 and H 11G 2arethe photodarlington-type optically coupled optoisolators. Both devices have a gallium arsenide infrared em itting diode coupled with a


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    H11G1 H11G2 H11G1 C1706 C1705 C1707 C1708 PDF

    H1163

    Abstract: C1709 C1706 MCA11G3 C2083 C2090 H11G1 H11G2 H11G3 MCA11G1
    Text: GENL I N S T R t OPTOELEK 88D aa GENERAL INSTRUMENT 0 2897 DE Ê BôTDlHû 00020^7 D HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS MCA11G1 H11G1 MCA11G2 (H11G2) MCA11G3 (H11G3) PACKAGE DIMENSIONS Æ . hB l iS l r" I 6.86 (.270) 6.35 (.250) 0.36 (.014) I f ¥


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    T012a MCA11G1 MCA11G2 H11G2) MCA11G3 H11G3) C2090 C2083 MCA11G1 MCA11G2 H1163 C1709 C1706 MCA11G3 C2083 C2090 H11G1 H11G2 H11G3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 6 LEADED DEVICES continued Resistor Darlington Output Pinout: 1-Anode, 2-Cathode, 3-N.C., 4-Emitter, 5-Collector, 6-Base (Style 1) Current Transfer Ratio (CTR) Device H11G1S,F H11G2S,F H11G3S.F % Min e* If @ mA 1000 1000 200 10 10 1 VCE(sat) VOF Volts Volts


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    H11G1S H11G2S H11G3S MOC8204$ H11D1S H11D2S H11L1S H11L2S MOC5008S MQC5009S PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONI CS 1 I — I H11G1 H11G2 PACKAGE DIMENSIONS DESCRIPTION 1 6.35 REF o 03 1 W W ^ 7.62 ^ MAX 0.41 OP _ 0.2 1 The H11G1 and H11G2 are the photodarlington-type optically coupled optoisolators. Both devices have a


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    H11G1 H11G2 H11G2 C1705 C1706 C1707 C1708 PDF

    H11U

    Abstract: No abstract text available
    Text: 02897 D J ^ t t a S l 88D flfl T E C H N O L O G I E S CORP GENERAL INSTRUMENT 0DD2S-Ì7 h ig h v o itag e p h o to p a ru n g to n o p to c o u p le r s MCA11G1 H11G1 M C A 11G 2 (H11G2) M C A 11G 3 (H11G3) DESCRIPTION PACKAGE DIMENSIONS t 6.86 (.270) 8.89 (.350)


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    MCA11G1 H11G1) H11G2) H11G3) MCA11G1 MCA11G2 MCA11G2 H11G1, H11G2, H11U PDF

    Untitled

    Abstract: No abstract text available
    Text: I s O OPTOELECTRONICS OPTOCOUPLERS Pho P a rt C TR @ B V Ce o 10 mA lF % (V) m a x BV cbo (V) m in m in *W *O FF •CE (sat) <v) (U S ) A g e n cy 'IS O P kg A p p r o v a ls N u m be r m in H11G1 1000 100 100 1.0 5.3 kV A, B, D, F. N, S, U H11G1.300 1000


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    H11G1 H11G2 H11G3 H11G45 H11G46 PDF

    h11g1 case 730c-04

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR! TECHNICAL DATA TO Q VD € Ul CSA SETI <§> ® SEMKO DEMKO H11G1* H11G2* H11G3 NEM KO [CTR . 1000% M in] 6-Pin D IP O ptoisolators Darlington Output On-Chip R esistors [CTR = 1000% Min] [CTR * 200% Min] ‘ M otorola P referred


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    H11G1, H11G2 H11G3 H11G1 H11G2-- H11G1 H11G1* H11G2* H11G3 h11g1 case 730c-04 PDF

    NPN Silicon Phototransistor

    Abstract: No abstract text available
    Text: O ptoisolator Specifications H11G1, H11G2 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H U G series consists o f a gallium arsenide, infrared em itting diode coupled with a silicon Darlington-connected


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    H11G1, H11G2 NPN Silicon Phototransistor PDF