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    Toshiba America Electronic Components GT50J325Q

    Trans IGBT Chip N-CH 600V 50A 3-Pin TO-3P(LH) - Bulk (Alt: GT50J325(Q))
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    Toshiba America Electronic Components GT50J325

    Igbt, 600V, To-3P(Lh); Continuous Collector Current:50A; Collector Emitter Saturation Voltage:2.45V; Power Dissipation:240W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- Rohs Compliant: Yes |Toshiba GT50J325
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    GT50J325 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT50J325 Toshiba IGBT Chip, N Channel, 600V, 2-21F2C, 3-Pin Original PDF
    GT50J325 Toshiba TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Original PDF
    GT50J325 Toshiba High-Speed IGBTs Original PDF
    GT50J325 Toshiba Discrete IGBTs Original PDF
    GT50J325Q Toshiba TRANS IGBT CHIP N-CH 600V 50A 3(2-21F2C) Original PDF
    GT50J325(Q) Toshiba GT50J325 - Trans IGBT Chip N-CH 600V 50A 3-Pin TO-3P(LH) Original PDF

    GT50J325 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GT50J325

    Abstract: No abstract text available
    Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT50J325 GT50J325

    GT50J325

    Abstract: No abstract text available
    Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation · Enhancement-mode · Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT50J325 GT50J325

    GT50J325

    Abstract: No abstract text available
    Text: GT50J325 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT50J325 ○ 大電力スイッチング用 ○ 高速スイッチング用 単位: mm • 第 4 世代品 • 取り扱いが簡単なエンハンスメントタイプ


    Original     		PDF GT50J325 2-21F2C 20070701-JA GT50J325

    gt50j325

    Abstract: GT50J325 Toshiba
    Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • Fourth generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT50J325 gt50j325 GT50J325 Toshiba

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Preliminary GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT50J325 High Power Switching Applications Fast Switching Applications ● ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS


    Original     		PDF GT50J325 50kHz Tj125

    Untitled

    Abstract: No abstract text available
    Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • Fourth generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT50J325

    GT50J325

    Abstract: No abstract text available
    Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • Fourth generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT50J325 GT50J325

    GT50J325

    Abstract: No abstract text available
    Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT50J325 GT50J325

    Untitled

    Abstract: No abstract text available
    Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • Fourth generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT50J325

    Untitled

    Abstract: No abstract text available
    Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT50J325

    Untitled

    Abstract: No abstract text available
    Text: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT50J121

    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


    Original     		PDF BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG

    GT30J124

    Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
    Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.


    Original     		PDF BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123

    GT50J121

    Abstract: GT50J325
    Text: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT50J121 GT50J121 GT50J325

    GT30F124

    Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
    Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    GT15J301

    Abstract: gt10j321 GT15J321 GT20J321 GT30J121 GT30J324 GT50J121 GT50J325 GT5J121 GT5J321
    Text: New Product Guide High-Speed IGBTs NEW PRODUCT GUIDE 1. Features and Structure Features of high-speed IGBT FS Series Combines injection optimization, wafer-thinning technology and trench technology. • Low VCE(sat) as a result of trench technology • Low VCE(sat) and higher speed due to thin wafer


    Original     		PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    GT50J121

    Abstract: GT50J325
    Text: GT50J121 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT50J121 ○ 大電力スイッチング用 ○ 高速スイッチング用 単位: mm • 第 4 世代品 • 取り扱いが簡単なエンハンスメントタイプ


    Original     		PDF GT50J121 2-21F2C 20070701-JA GT50J121 GT50J325

    s5j53

    Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
    Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require


    Original     		PDF E0010A BCE0010A 3503C-0109 s5j53 S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A

    tb6584

    Abstract: TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram
    Text: 2008-9 SYSTEM CATALOG Home Appliances s e m i c o n d u c t o r h t tp://w w w.se micon.tosh iba.co.jp/e n g Air Conditioners Induction Rice Cookers C O N T E N T S Characteristics of Motor Control Devices. 3 Dishwashers


    Original     		PDF TLCS-870/C1 SCE0013B E-28831 SCE0013C tb6584 TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    GT45F122

    Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
    Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124