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    100Cr6

    Abstract: BYT30-200
    Text: S G S-THGMSON S^C D 1 -7 ^ 59C O T H O M S O N -C S F 2 3 ? GGG2151 D Y' 02151 B Y T 30 - 200 — 400, R DIVISION SEM ICO N D U CTEU RS DISCRETS FAST RECOVERY RECTIFIER REDRESSEUR RAPIDE ADVANCE INFORMATION ~\ / > V r r m 200 to 400 V •f(AV) 3 0 A « t T c8ta 90 °C


    OCR Scan     		PDF GGG2151 CB-34) CB-425) CB-262) CB-262 i0840 CB-19) CB-428) CB-244 100Cr6 BYT30-200

    BYT30-200

    Abstract: 100-C rm 76
    Text: S G S-THGMSON S^C D 1 - 7 ^ 2 3 ? 59C 02151 O THOMSON-CSF GGG2151 S | D Y' BYT 30 - 200 —400, R DIVISION SEMICONDUCTEURS DISCRETS FAST RECOVERY RECTIFIER REDRESSEUR RAPIDE ADVANCE INFORMATION ~ \ / > V r r m 200 to 400 V •f(AV) 3 0 A « t T c8ta 90 °C


    OCR Scan     		PDF GGG2151 CB-34) BYT30-200 100-C rm 76

    Untitled

    Abstract: No abstract text available
    Text: XL24C02 2,048-Bit Serial Electrically Erasable PROM 2.7 To 5.5 Volt Operation FEATURES • ■ ■ PIN CONFIGURATIONS Low Power CMOS — Active current less than 2mA — Standby current less than 2|iA Hardware Write Protection — Write Control pin 2.7V to 5.5V Operation


    OCR Scan     		PDF XL24C02 048-Bit 10OKHz