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Catalog Datasheet	MFG & Type	Document Tags	PDF
mgfx35v0510 Abstract: GFX35V0510 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFX35V0510 1 0 .S — 1 l.OG Hz BAND 3 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FX 35V 0510 is an internally impedance matched GaAs power FET especially designed for use in 10.5 ~ 11.0 GHz band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	GFX35V0510 mgfx35v0510 GFX35V0510	PDF

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mgfx35v0510

Abstract: GFX35V0510
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFX35V0510 1 0 .S — 1 l.OG Hz BAND 3 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FX 35V 0510 is an internally impedance matched GaAs power FET especially designed for use in 10.5 ~ 11.0 GHz band amplifiers. The hermetically sealed metal-ceramic

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