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    Text: MITSUBISHI SEMICONDUCTOR CGaAs FET> M GFK33V4045 1 4 .0 — 14.5GHz BAND 2W INTERNALLY M ATCHED GaAs F E T DESCRIPTION The M G F K 3 3 V 4 0 4 5 is an in te rn a lly impedance matched GaAs power FET especially designed fo r use in 14.0 ~ 14.5 GHz-band am plifiers. The herm etically sealed metal-ceramic


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