GF4511D Search Results

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Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF4511D SU PER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 5 1 1 D super-low -noise HEMT High Electron M ob ility Transistor is designed fo r use in K band am pli­ fiers. The new m etal-ceram ic package is used to reduce