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    2N645

    Abstract: 2N6449
    Text: HIGH VOLTAGE 2N6449 2N6450 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS GEOMETRY559 HIGH BVgss - • • 300V MIN 2N6449 HIGH POWER RATING . . . 5W ELECTRICAL DATA TO-39 Package 0.3SO =OIA Ö37Ö ABSOLUTE M A X IM U M RATINGS PARAMETER SYMBOL


    OCR Scan     		GEOMETRY559 2N6449 2N6450 2N6449) 2N6450 300/is, 2N645 PDF