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    Vishay Intertechnologies GB10RF120K

    Trans IGBT Module N-CH 1.2KV 20A 24-Pin ECONO2 PIM - Bulk (Alt: GB10RF120K)
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    GB10RF120K Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GB10RF120K International Rectifier IGBT PIM Module Original PDF

    GB10RF120K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    brake DIODE

    Abstract: E78996 rectifier module GB10RF120K law 4933
    Text: GB10RF120K Vishay High Power Products IGBT PIM Module, 13 A FEATURES • • • • • • • • • • • ECONO2 PIM Low VCE on non punch through IGBT technology Low diode VF 10 µs short circuit capability Square RBSOA HEXFRED antiparallel diode with ultrasoft


    Original     		PDF GB10RF120K 18-Jul-08 brake DIODE E78996 rectifier module GB10RF120K law 4933

    k3525

    Abstract: brake DIODE GB10RF120K
    Text: Bulletin I27278 01/07 GB10RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 13A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft


    Original     		PDF I27278 GB10RF120K E78996 k3525 brake DIODE GB10RF120K

    Untitled

    Abstract: No abstract text available
    Text: GB10RF120K Vishay High Power Products IGBT PIM Module, 13 A FEATURES • • • • • • • • • • • ECONO2 PIM Low VCE on non punch through IGBT technology Low diode VF 10 µs short circuit capability Square RBSOA HEXFRED antiparallel diode with ultrasoft


    Original     		PDF GB10RF120K 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27152 06/03 GB10RF120K IGBT PIM MODULE VCES = 1200V Features • • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics


    Original     		PDF I27152 GB10RF120K E78996

    k3525

    Abstract: 8205 datasheet GB10RF120K ice25 ti marking AAB
    Text: Bulletin I27152 Rev.A 07/03 GB10RF120K IGBT PIM MODULE VCES = 1200V Features • • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics


    Original     		PDF I27152 GB10RF120K E78996 k3525 8205 datasheet GB10RF120K ice25 ti marking AAB

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27278 01/07 GB10RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 13A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft


    Original     		PDF I27278 GB10RF120K E78996 12-Mar-07