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    FTD1011 Search Results

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    FTD1011 Price and Stock

    Rochester Electronics LLC FTD1011-TL-E

    PCH+PCH 2.5V DRIVE SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FTD1011-TL-E Bulk 9,000 423
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    • 1000 $0.71
    • 10000 $0.71
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    onsemi FTD1011-TL-E

    Power MOSFET, P Channel, 20 V, 3 A, 0.05 ohm, TSSOP, Surface Mount - Bulk (Alt: FTD1011-TL-E)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FTD1011-TL-E Bulk 4 Weeks 509
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    • 1000 $0.70776
    • 10000 $0.64878
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    Rochester Electronics FTD1011-TL-E 9,000 1
    • 1 $0.7168
    • 10 $0.7168
    • 100 $0.6738
    • 1000 $0.6093
    • 10000 $0.6093
    		Buy Now

    FTD1011 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FTD1011 Sanyo Semiconductor Ultrahigh-speed switching (2devices) Original PDF
    FTD1011-E Sanyo Semiconductor Transistor Mosfet P-CH 20V 3A 8TSSOP Original PDF

    FTD1011 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FTD1011 P- Channel Silicon MOS FET TENTATIVE Features • Low ON-state resistance. • 2.5V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC


    Original     		PDF FTD1011 --10V, 990916TM2fXHD

    IT02300

    Abstract: TA-2725 MARKING D1011 D1011 FTD1011 65931
    Text: Ordering number : ENN6593 FTD1011 P-Channel Silicon MOSFET FTD1011 Ultrahigh-Speed Switching Applications • • • • Package Dimensions Low ON-resistance. 2.5V drive. Mount height of 1.1mm. Composite type, facilitating high-density mounting. unit : mm


    Original     		PDF ENN6593 FTD1011 FTD1011] IT02300 TA-2725 MARKING D1011 D1011 FTD1011 65931

    on line ups circuit diagrams

    Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
    Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm


    Original     		PDF EP51E CPH6605 MCH6613 ECH8609 CPH3424 CPH3427 K3614 FW343 FW356 FW360 on line ups circuit diagrams 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04

    D1014

    Abstract: No abstract text available
    Text: FTD1014 P- Channel Silicon MOS FET TENTATIVE Features • Low ON-state resistance. • 2.5V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC


    Original     		PDF FTD1014 --10V, FTD1011 990916TM2fXHD D1014