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    FSJ9260R Search Results

    FSJ9260R Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FSJ9260R Intersil 27A, -200V, 0.130 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSJ9260R1 Fairchild Semiconductor 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFET Original PDF
    FSJ9260R1 Intersil 27A, -200V, 0.130 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSJ9260R3 Fairchild Semiconductor 27A, -200V, 0.130 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSJ9260R3 Intersil 27A, -200V, 0.130 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSJ9260R4 Fairchild Semiconductor 27A, -200V, 0.130 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSJ9260R4 Intersil 27A, -200V, 0.130 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF

    FSJ9260R Datasheets Context Search

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    Rad Hard in Fairchild for MOSFET

    Abstract: No abstract text available
    Text: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSJ9260D, FSJ9260R -200V, Rad Hard in Fairchild for MOSFET

    1E14

    Abstract: 2E12 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FSJ9260R1 Rad Hard in Fairchild for MOSFET
    Text: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSJ9260D, FSJ9260R -200V, 1E14 2E12 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FSJ9260R1 Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: S E M I C O N D U C T O R FSJ9260D, FSJ9260R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs February 1998 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSJ9260D, FSJ9260R 1-800-4-HARRIS

    MIL-S-19500

    Abstract: 1E14 2E12 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FSJ9260R1
    Text: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSJ9260D, FSJ9260R -200V, MIL-S-19500 1E14 2E12 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FSJ9260R1

    Untitled

    Abstract: No abstract text available
    Text: 33 M S FSJ9260D, FSJ9260R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs February 1998 Description Features • Z7A, -200V, r D S O N The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSJ9260D, FSJ9260R -200V, 36MeV/m 1-800-4-HARRIS

    SM81A

    Abstract: No abstract text available
    Text: FSJ9260D, FSJ9260R 33 HARRIS SEMICONDUCTOR 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 27A, -200V, rDS ON = 0.13012 The Discrete Products Operation ot Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSJ9260D, FSJ9260R -200V, MIL-STD-750, MIL-S-19500, 100ms; 500ms; SM81A

    Untitled

    Abstract: No abstract text available
    Text: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description . 27A, -200V, rDS 0 N = 0.130£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSJ9260D, FSJ9260R -200V, varietyTO-254AA MIL-S-19500

    Power MOSFET Selection Guide

    Abstract: TO-205AF Package
    Text: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV0SS V rDS(ON) (fi) T0-205AF 100 0.600 id (A) 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-2Û5AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0,480 5 FSL130D, FSL130R TO-205AF


    OCR Scan     		PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R Power MOSFET Selection Guide TO-205AF Package

    3203 MOSFET

    Abstract: Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264
    Text: RAD HARD MOSFETs RAD HARD SEGR MOSFETs PAGE Rad Hard Power MOSFET Selection G u id e . 3-3 Rad Hard Data Packages - Harris Power T ra n s is to re .


    OCR Scan     		PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R 3203 MOSFET Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264

    MOSFET Selection Guide

    Abstract: TO257AA t0-205af TO254AA FSj264
    Text: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV d s s V rDS(ON) (£!) ' d (A) FSL110D, FSL110R PART NUMBER T0-205AF 100 0.600 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-205AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0.480


    OCR Scan     		PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R MOSFET Selection Guide TO257AA t0-205af TO254AA FSj264