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    FQB22P10 Search Results

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    FQB22P10 Price and Stock

    onsemi FQB22P10TM

    MOSFET P-CH 100V 22A D2PAK
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    DigiKey FQB22P10TM Reel 2,398 800
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    FQB22P10TM Cut Tape 1
    • 1 $1.92
    • 10 $1.599
    • 100 $1.2723
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    FQB22P10TM Digi-Reel 1
    • 1 $1.92
    • 10 $1.599
    • 100 $1.2723
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    Avnet Americas FQB22P10TM Ammo Pack 1
    • 1 $2
    • 10 $1.66
    • 100 $1.32
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    FQB22P10TM Reel 800
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    FQB22P10TM Reel 22 Weeks 800
    • 1 $1.83078
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    FQB22P10TM Reel 22 Weeks 800
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    FQB22P10TM Reel 22 Weeks 800
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    Mouser Electronics FQB22P10TM 30,508
    • 1 $1.96
    • 10 $1.64
    • 100 $1.3
    • 1000 $0.923
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    Newark FQB22P10TM Cut Tape 3,573 1
    • 1 $2
    • 10 $1.66
    • 100 $1.32
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    FQB22P10TM Reel 800
    • 1 $1.09
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    • 10000 $0.969
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    FQB22P10TM Reel 800
    • 1 $1.26
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    • 100 $1.26
    • 1000 $1.26
    • 10000 $1.21
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    FQB22P10TM Cut Tape 800
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    RS FQB22P10TM Bulk 2 Weeks 5
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    • 100 $1.73
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    Onlinecomponents.com FQB22P10TM
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    TME FQB22P10TM 2,394 1
    • 1 $1.87
    • 10 $1.57
    • 100 $1.21
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    Richardson RFPD FQB22P10TM 800
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    Avnet Asia FQB22P10TM 22 Weeks 1,600
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    • 10000 $0.81772
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    Avnet Silica FQB22P10TM 23 Weeks 800
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    Chip1Stop FQB22P10TM Cut Tape 800
    • 1 $1.88
    • 10 $1.51
    • 100 $1.24
    • 1000 $0.94
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    EBV Elektronik FQB22P10TM 38 Weeks 800
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    New Advantage Corporation FQB22P10TM 800 1
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    onsemi FQB22P10TM-F085

    MOSFET P-CH 100V 22A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQB22P10TM-F085 Reel
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    onsemi FQB22P10TM_F085

    -100V /-22A/0.125Hm@vgs=-10V/Tape Reel |Onsemi FQB22P10TM_F085
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    Newark FQB22P10TM_F085 Reel 800
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    FQB22P10 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FQB22P10 Fairchild Semiconductor 100 V P-Channel MOSFET Original PDF
    FQB22P10 Fairchild Semiconductor 100V P-Channel MOSFET Original PDF
    FQB22P10 Fairchild Semiconductor QFET P-CHANNEL Scan PDF
    FQB22P10TM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 22A D2PAK Original PDF
    FQB22P10TM Fairchild Semiconductor 100V P-Channel QFET Original PDF
    FQB22P10TM_F085 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 22A D2PAK Original PDF
    FQB22P10TM-F085 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 100V 22A D2PAK Original PDF
    FQB22P10TM_NL Fairchild Semiconductor 100V P-Channel QFET Original PDF

    FQB22P10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FQB22P10

    Abstract: FQI22P10
    Text: FQB22P10 / FQI22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB22P10 FQI22P10 -100V, FQI22P10

    Untitled

    Abstract: No abstract text available
    Text: FQB22P10 / FQI22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB22P10 FQI22P10 -100V, FQI22P10TU O-262

    FQB22P10TM

    Abstract: No abstract text available
    Text: QFET FQB22P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB22P10TM -100V,

    Untitled

    Abstract: No abstract text available
    Text: QFET P-CHANNEL FQB22P10, FQI22P10 FEATURES BVDSS = −100V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ.


    Original     		PDF FQB22P10, FQI22P10 -100V FQB22P10

    FQB22P10

    Abstract: FQI22P10
    Text: TM FQB22P10 / FQI22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB22P10 FQI22P10 -100V, FQI22P10

    Untitled

    Abstract: No abstract text available
    Text: FQB22P10 P-Channel QFET MOSFET -100 V, -22 A, 125 mΩ Features Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		PDF FQB22P10

    Untitled

    Abstract: No abstract text available
    Text: QFET FQB22P10 / FQI22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB22P10 FQI22P10 -100V, FQI22P10

    Untitled

    Abstract: No abstract text available
    Text: QFET FQB22P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB22P10TM -100V,

    FQB22P10

    Abstract: FQI22P10
    Text: QFET FQB22P10 / FQI22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB22P10 FQI22P10 -100V, FQI22P10

    FQB22P10

    Abstract: FQI22P10
    Text: FQB22P10 / FQI22P10 April 2000 QFET TM FQB22P10 / FQI22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB22P10 FQI22P10 -100V, FQI22P10

    Untitled

    Abstract: No abstract text available
    Text: FQB22P10 / FQI22P10 P-Channel QFET MOSFET -100 V, -22 A, 125 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQB22P10 FQI22P10 FQI22P10

    Common rail piezo injector driver

    Abstract: Common rail injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector driver Piezo Direct Injection SCHEMATIC IGNITION WITH IGBTS FAN7085 DRIVER injector Common rail FQD3P50TM FQD12N201
    Text: AUTOMOTIVE SOLUTIONS TO MAXIMIZE FUEL EFFICIENCY & REDUCE CO2 EMISSIONS Saving our world, 1mW at a time www.fairchildsemi.com INTRODUCTION Fairchild Semiconductor Automotive Solutions Whether specifying an intelligent ignition control for high performance engine management systems or


    Original     		PDF

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRF540NSPBF

    Abstract: mosfet .5a 100v 12061C104KAT2A 100v,33a FQB22P10TM FQB33N10TM IRF9540NSPBF MAX6496 fairchild mosfet selection guide
    Text: 19-0999; Rev 0; 9/07 MAX6496 Evaluation Kit The MAX6496 evaluation kit EV kit demonstrates a highvoltage, overvoltage-protection circuit for automotive applications that must survive load-dump and high-voltage transient conditions. This EV kit is a fully assembled


    Original     		PDF MAX6496 MAX6496 IRF540NSPBF mosfet .5a 100v 12061C104KAT2A 100v,33a FQB22P10TM FQB33N10TM IRF9540NSPBF fairchild mosfet selection guide

    FQB27N25

    Abstract: FQB46N15 FDB2532 FQB27P06 FDB6644 FDB6670AL FDB6676 FDB7030L FDB7042L FDB7045L
    Text: Discrete MOSFET TO-263 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-263(D2PAK) N-Channel ISL9N302AS3ST 30 Single 0.0023 0.0033 - - 110 75 345 FDB8030L 30 Single 0.0035


    Original     		PDF O-263 O-263 ISL9N302AS3ST FDB8030L ISL9N303AS3ST FDB7045L ISL9N304AS3ST FDB6676 FDB6670AL 30VDS FQB27N25 FQB46N15 FDB2532 FQB27P06 FDB6644 FDB6670AL FDB6676 FDB7030L FDB7042L FDB7045L

    common rail piezo injector driver

    Abstract: Common rail injector driver common rail injector common rail injector test FAN7093 piezo injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector voltage common rail injector driver application SCHEMATIC IGNITION WITH IGBTS
    Text: AUTOMOTIVE SOLUTIONS Power Semiconductors Maximize Efficiency and Reliability INTRODUCTION Automotive Electronic Designers need suppliers who Fairchild also offers a variety of automotive products in understand their business. With a comprehensive approach


    Original     		PDF

    IRF540 p-channel MOSFET

    Abstract: of IRF9540 and IRF540 IRF540 p-channel MOSFET pin out Max6495 6-TDFN-EP M1IRF540 12061C104KAT2A MOSFET IRF540 CMPZ5248B MAX6495 SMBJ54A
    Text: 19-4002; Rev 2; 12/06 MAX6495 Evaluation Kit The MAX6495 evaluation kit EV kit demonstrates a high-voltage overvoltage protection circuit for automotive applications that must survive load dump and highvoltage transient conditions. This EV kit is a fully assembled and tested surface-mount board.


    Original     		PDF MAX6495 MAX6495 IRF540 p-channel MOSFET of IRF9540 and IRF540 IRF540 p-channel MOSFET pin out Max6495 6-TDFN-EP M1IRF540 12061C104KAT2A MOSFET IRF540 CMPZ5248B SMBJ54A

    FQB22P10

    Abstract: FQI22P10
    Text: QFET P-CHANNEL FQB22P10, FQI22P10 FEATURES BVqss = 00V Advanced New Design Rds ON = 0 1 25Î2 Avalanche Rugged Technology In = - 2 2 A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 40nC (Typ.)


    OCR Scan     		PDF FQB22P10, FQI22P10 D2PAK/TO-263 PAK/TO-263 FQB22P10 FQI22P10

    Untitled

    Abstract: No abstract text available
    Text: QFET P-CHANNEL FQB22P10, FQI22P10 FEATURES BVDSS = • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ.


    OCR Scan     		PDF FQB22P10, FQI22P10 D2PAK/TO-263 D2PAK/TO-263