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    FM25160 Price and Stock

    Festo DFM-25-160-B-PPV-A-GF

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    Festo DFM-25-160-B-PPV-A-KF

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    Festo DFM-25-160-B-PPV-A-GF (ALTERNATE: 588785)

    Guided Drive/Guided Cylinder, pneumatic | Festo DFM-25-160-B-PPV-A-GF
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    Festo DFM-25-160-B-PPV-A-KF (ALTERNATE: 609353)

    Guided Drive/Guided Cylinder, pneumatic | Festo DFM-25-160-B-PPV-A-KF
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    Ramtron International Corporation FM25160-S

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    FM25160 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FM25160 Ramtron International 16Kb FRAM Serial Memory Original PDF
    FM25160 Ramtron International 16Kb FRAM Serial Memory Original PDF
    FM25160-C Ramtron International EEPROM Serial Original PDF
    FM25160-P Ramtron International 16Kb FRAM Serial Memory Original PDF
    FM25160-P Ramtron International 16Kb FRAM serial memory Original PDF
    FM25160-P Ramtron International 16Kb FRAM Serial Memory Scan PDF
    FM25160-S Ramtron International 16Kb FRAM serial memory. Original PDF
    FM25160-S Ramtron International 16Kb FRAM Serial Memory Original PDF
    FM25160-S Ramtron International 16Kb FRAM Serial Memory Scan PDF

    FM25160 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FM25160

    Abstract: 1E10 FM25040 FM25160-P FM25160-S MS-001
    Text: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process


    Original     		PDF FM25160 FM25160 16-kilobit MS-001 1E10 FM25040 FM25160-P FM25160-S

    Untitled

    Abstract: No abstract text available
    Text: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25160 FM25160 16-kilobit MS-001

    1E10

    Abstract: FM25040 FM25160 FM25160-P FM25160-S MS-001
    Text: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process


    Original     		PDF FM25160 FM25160 16-kilobit MS-001 1E10 FM25040 FM25160-P FM25160-S

    "Ferroelectric RAM"

    Abstract: 25160 SCK 055 FM25040 FM25160 MC6805 MC68HC11
    Text: FM25160 FRAM Serial Memory Product Specification Features Simple Three Wire Bus - SPI Compatible CPOL = 0, CPHA = 0 - 2.1MHz Maximum Clock Rate • Multiple Levels of Write Protection - Hardware Write Protect Pin - Internal Write Enable Latch - Block Protect Bits


    Original     		PDF FM25160 16Kbit "Ferroelectric RAM" 25160 SCK 055 FM25040 MC6805 MC68HC11

    25160

    Abstract: AN301 25C160 AN-301 FM25160 FM25C160
    Text: AN-301 Differences in FM25160 and FM25C160 16K SPI FRAM Devices DESCRIPTION There are differences between the FM25160 and FM25C160 SPI 16Kb FRAM devices. The FM25160 operates up to 1.8MHz and supports Mode 0 clocking, whereas the FM25C160 operates at speeds up to


    Original     		PDF AN-301 FM25160 FM25C160 FM25C160 FM25160 20MHz 11-bit 25C160 25160 AN301 AN-301

    DATASHEET OF SPI protocol

    Abstract: FM25040 FM25160
    Text: Application Note SPI Bus Compatibility FM25160 16Kb SPI FRAM Overview The FM25160 uses an industry standard SPI interface. When comparing the FM25160 with 16Kb SPI EEPROMs, users may notice two minor operating differences. First, the SPI bus protocol includes 4 modes which may be selected by the


    Original     		PDF FM25160 FM25040 16-bit DATASHEET OF SPI protocol

    FM25040

    Abstract: FM25160 FM25160-P FM25160-S MS-001 5C260
    Text: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25160 FM25160 16-kilobit MS-001 FM25040 FM25160-P FM25160-S 5C260

    fm25160s

    Abstract: No abstract text available
    Text: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process


    Original     		PDF FM25160 FM25160 16-kilobit FM25160-P FM25160-S 545-FRAM, fm25160s

    AN-300

    Abstract: FM25040 FM25160
    Text: AN-300 SPI Bus Compatibility FM25160 16Kb SPI FRAM Overview The FM25160 uses an industry standard SPI interface. When comparing the FM25160 with 16Kb SPI EEPROMs, users may notice two minor operating differences. First, the SPI bus protocol includes 4 modes which may be selected by the


    Original     		PDF AN-300 FM25160 FM25040 16-bit AN-300

    EDGE22

    Abstract: FM25040 FM25160
    Text: Application Note SPI Bus Compatibility FM25160 16Kb SPI FRAM Overview The FM25160 uses an industry standard SPI interface. When comparing the FM25160 with 16Kb SPI EEPROMs, users may notice two minor operating differences. First, the SPI bus protocol includes 4 modes which may be selected by the


    Original     		PDF FM25160 FM25040 16-bit EDGE22

    Untitled

    Abstract: No abstract text available
    Text: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25160 FM25160 16-kilobit MS-001

    AEC-Q100

    Abstract: FM25160 FM25C160 FM25C160-S
    Text: FM25C160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25C160 FM25C160 16-kilobit 20MHz. AEC-Q100 FM25C160B. AEC-Q100 FM25160 FM25C160-S

    FM25160

    Abstract: FM25C160 FM25C160-P FM25C160-S MS-001
    Text: FM25C160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25C160 FM25C160 16-kilobit MS-001 FM25160 FM25C160-P FM25C160-S

    A6001

    Abstract: FM25160 FM25C160 FM25C160-GA Q100
    Text: AEC Q100 Grade 1 Compliant FM25C160 – Automotive Temp. 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25C160 FM25C160, FM25C160GA A60018G RIC0638 FM25C160 A6001 FM25160 FM25C160-GA Q100

    FM25C160-GTR

    Abstract: FM25C160-G AEC-Q100 FM25160 FM25C160 FM25C160-S
    Text: FM25C160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25C160 FM25C160 16-kilobit 20MHz. AEC-Q100 FM25C160-GTR FM25C160-G AEC-Q100 FM25160 FM25C160-S

    AEC-Q100-002

    Abstract: FM25160
    Text: Preliminary FM25C160C 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  36 year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25C160C MS-012 FM25C160C, FM25C160CG A00002G1 RIC1051 FM25C160C AEC-Q100-002 FM25160

    Untitled

    Abstract: No abstract text available
    Text: FM25C160B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM Organized as 2,048 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme


    Original     		PDF FM25C160B FM25C160B 16-serves

    1E10

    Abstract: FM25040 FM25040-P FM25040-S FM25160 MS-001
    Text: FM25040 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process


    Original     		PDF FM25040 FM25040 MS-001 1E10 FM25040-P FM25040-S FM25160

    MC6805

    Abstract: No abstract text available
    Text: F ^ p M T R O N FM25160FRAM Serial Memory Product Specification Features • 16Kbit Nonvolatile Ferroelectric RAM Organized as 2,048 x 8 ■ Low Power CMOS Technology - I OpA Standby Over Industrial Temperature Range - 5}iA Standby Over Commercial Temperature Range


    OCR Scan     		PDF FM25160FRAM® 16Kbit 25160-C MC6805

    Untitled

    Abstract: No abstract text available
    Text: FM25160FRAM Serial Memory w ^ p is ilT R O N features <4 KiKhil N onvolatile F e rro e le c tric KAVI O rg a m /e d as 2 .0 iN \ S • S im ple T h re e W ire Bus H Low P o w e r CMOS T e ch n o lo g \ SIM C o m p a lib le CPOL = 0 , CPIIA = 0 2 .1 VII1/ M axim um C lo ck Rate


    OCR Scan     		PDF FM25160FRAM®

    Untitled

    Abstract: No abstract text available
    Text: FM25160 16Kb F R A M 6 R 3 M 1 R O N Serial M em ory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion (1010) read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process


    OCR Scan     		PDF FM25160 FM25160 16-kilobit

    1E10

    Abstract: FM25040 FM25160 FM25160-P FM25160-S opcoa
    Text: FM25160 6 R 3 M 1 R O N 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion (1010) read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process


    OCR Scan     		PDF FM25160 FM25160 16-kilobit nonvola25160 MS-001 1E10 FM25040 FM25160-P FM25160-S opcoa

    t0dv

    Abstract: No abstract text available
    Text: E FM25160FRAM Serial Memory r ^ M T R O N Product Preview* Features • 16Kbit Nonvolatile Ferroelectric RAM Organized as 2,048 x f ■ Low Power CMOS Technology - lOpA Standby Over Industrial Temperature Range -5|iA Standby Over Commercial Temperature Range


    OCR Scan     		PDF FM25160FRAMÂ 16Kbit 000Vo FM25160 --------------------16K t0dv

    MC6805

    Abstract: Ramtron FRAM Serial Memory
    Text: F IM TRO N 2 M 5 1 6 F R A M S e r i a l M e m o r y Product Preview* Features • 16Kbit Nonvolatile Ferroelectric RAM Organized as 2,048 x 8 ■ Low Power CMOS Technology - lOpA Standby Over Industrial Temperature Range - 5|iA Standby Over Commercial Temperature Range


    OCR Scan     		PDF FM25160FRAMÂ 16Kbit -10Billion 25160-PS 00003bb MC6805 Ramtron FRAM Serial Memory