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    FLC057WG Search Results

    FLC057WG Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLC057WG Fujitsu C-Band Power GaAs FET Original PDF
    FLC057WG-E1 Fujitsu FET: P Channel: ID 0.3 A Original PDF

    FLC057WG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C-Band Power GaAs FET

    Abstract: FLC057WG
    Text: FLC057WG C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general


    Original     		PDF FLC057WG FLC057WG C-Band Power GaAs FET

    FLC057WG

    Abstract: No abstract text available
    Text: FLC057WG C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general


    Original     		PDF FLC057WG FLC057WG St4888

    Untitled

    Abstract: No abstract text available
    Text: FLC057WG C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general


    Original     		PDF FLC057WG FLC057WG

    Untitled

    Abstract: No abstract text available
    Text: FLC057WG C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general


    Original     		PDF FLC057WG FLC057WG

    FLC057WG

    Abstract: No abstract text available
    Text: FLC057WG C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general


    Original     		PDF FLC057WG FLC057WG FCSI0598M200

    FLC057WG

    Abstract: No abstract text available
    Text: FLC057WG C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 9.0dB(Typ.) High PAE: hadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general


    Original     		PDF FLC057WG FLC057WG FCSI0598M200

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


    Original     		PDF FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME

    FLC057WG

    Abstract: fujitsu GHz gaas fet fujitsu gaas fet
    Text: FLC057WG - C-Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 27.0dBm Typ. High Gain: G-j^B = 9.0dB(Typ.) High PAE: r iadd = 38%(Typ.) Proven Reliability


    OCR Scan     		PDF FLC057WG FLC057WG FCSI0598M200 fujitsu GHz gaas fet fujitsu gaas fet