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    FDS86252 Price and Stock

    onsemi FDS86252

    MOSFET N-CH 150V 4.5A 8SOIC
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    DigiKey FDS86252 Digi-Reel 5,715 1
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    FDS86252 Cut Tape 5,715 1
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    • 1000 $0.43806
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    FDS86252 Reel 2,500 2,500
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    Avnet Americas FDS86252 Reel 2,500 22 Weeks 2,500
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    FDS86252 Reel 0 Weeks, 2 Days 2,174
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    Mouser Electronics FDS86252 12,616
    • 1 $0.91
    • 10 $0.699
    • 100 $0.567
    • 1000 $0.439
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    Newark FDS86252 Reel 2,500
    • 1 $0.542
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    • 1000 $0.542
    • 10000 $0.473
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    Onlinecomponents.com FDS86252
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    Rochester Electronics FDS86252 2,131 1
    • 1 $0.579
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    • 100 $0.5443
    • 1000 $0.4921
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    Richardson RFPD FDS86252 2,500
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    • 10000 $0.39
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    Avnet Asia FDS86252 22 Weeks 2,500
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    Avnet Silica FDS86252 23 Weeks 2,500
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    EBV Elektronik FDS86252 24 Weeks 2,500
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    Flip Electronics FDS86252 3,381
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    FDS86252 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDS86252 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 4.5A 8SOIC Original PDF

    FDS86252 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FDS86252 N-Channel Power Trench MOSFET 150 V, 4.5 A, 55 mΩ Features General Description ̈ Max rDS on = 55 mΩ at VGS = 10 V, ID = 4.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDS86252

    FDS86252

    Abstract: No abstract text available
    Text: FDS86252 N-Channel Power Trench MOSFET 150 V, 4.5 A, 55 mΩ Features General Description „ Max rDS on = 55 mΩ at VGS = 10 V, ID = 4.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDS86252 FDS86252