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    Abstract: No abstract text available
    Text: UniFET-II TM FDP5N50NZU / FDPF5N50NZU N-Channel MOSFET 500V, 3.9A, 2.0Ω Features Description • RDS on = 1.7Ω ( Typ.)@ VGS = 10V, ID = 1.95A • Low Gate Charge ( Typ. 9nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50NZU FDPF5N50NZU

    FDPF5N50NZU

    Abstract: fdp5n50nzu
    Text: UniFET-IITM FDP5N50NZU / FDPF5N50NZU tm N-Channel MOSFET 500V, 3.9A, 2.0 Features Description • RDS on = 1.7 ( Typ.)@ VGS = 10V, ID = 1.95A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50NZU FDPF5N50NZU FDPF5N50NZU

    FDPF5N50NZ

    Abstract: FDPF5N50NZU FDP5N50NZU
    Text: UniFET-II TM FDP5N50NZU / FDPF5N50NZU N-Channel MOSFET 500V, 3.9A, 2.0Ω Features Description • RDS on = 1.7Ω ( Typ.)@ VGS = 10V, ID = 1.95A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50NZU FDPF5N50NZU FDPF5N50NZU FDPF5N50NZ