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    Abstract: No abstract text available
    Text: UniFETTM FDP16N50U / FDPF16N50UT tm N-Channel MOSFET, FRFET 500V, 15A, 0.48 Features Description • RDS on = 0.37 ( Typ.)@ VGS = 10V, ID = 7.5A • Low gate charge ( Typ. 32nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP16N50U FDPF16N50UT

    fdpf16n50ut

    Abstract: No abstract text available
    Text: UniFETTM FDP16N50U / FDPF16N50UT tm N-Channel MOSFET, FRFET 500V, 15A, 0.48 Features Description • RDS on = 0.37 ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP16N50U FDPF16N50UT fdpf16n50ut

    FDPF16N50UT

    Abstract: No abstract text available
    Text: FDP16N50U / FDPF16N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 15 A, 480 mΩ Features • R Description DS on = 370 mΩ ( Typ.) @ VGS = 10 V, ID = 7.5 A • Low Gate Charge (Typ. 32 nC) • Low Crss (Typ. 20 pF) • 100% Avalanche Tested • Improved dv/dt Capability


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