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    FDMD82100 Search Results

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    FDMD82100 Price and Stock

    onsemi

    onsemi FDMD82100

    MOSFET 2N-CH 100V 7A 12POWER
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    DigiKey FDMD82100 Digi-Reel 1
    • 1 $3.63
    • 10 $3.63
    • 100 $3.63
    • 1000 $3.63
    • 10000 $3.63
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    FDMD82100 Cut Tape
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    FDMD82100 Reel
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    Newark FDMD82100 Reel 3,000
    • 1 -
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    • 10000 $2.04
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    TME FDMD82100 1
    • 1 $3.36
    • 10 $3.03
    • 100 $2.4
    • 1000 $2.24
    • 10000 $2.24
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    Avnet Silica FDMD82100 143 Weeks 3,000
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    EBV Elektronik FDMD82100 143 Weeks 3,000
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    onsemi FDMD82100L

    MOSFET 2N-CH 100V 7A 12POWER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDMD82100L Reel
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    Newark FDMD82100L Cut Tape 1
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    Quest Components FDMD82100L 47
    • 1 $3.15
    • 10 $2.1
    • 100 $1.575
    • 1000 $1.575
    • 10000 $1.575
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    TME FDMD82100L 1
    • 1 $1.96
    • 10 $1.76
    • 100 $1.41
    • 1000 $1.3
    • 10000 $1.3
    Get Quote
    Avnet Silica FDMD82100L 143 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now
    EBV Elektronik FDMD82100L 143 Weeks 3,000
    • 1 -
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    • 10000 -
    Buy Now

    FDMD82100 Datasheets (2)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    FDMD82100 Fairchild Semiconductor FETs - Arrays, Discrete Semiconductor Products, FET N-CH 100V 7A 12POWER Original PDF
    FDMD82100L ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 100V 7A 6-MLP Original PDF

    FDMD82100 Datasheets Context Search

    Catalog Datasheet
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    PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMD82100 Dual N-Channel Power Trench MOSFET 100 V, 7 A, 19 mΩ Features General Description „ Max rDS on = 19 mΩ at VGS = 10 V, ID = 7 A This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance


    Original
    FDMD82100 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMD82100L Dual N-Channel PowerTrench MOSFET 100 V, 24 A, 19.5 mΩ Features General Description „ Max rDS on = 19.5 mΩ at VGS = 10 V, ID = 7 A This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain


    Original
    FDMD82100L PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMD82100L Dual N-Channel PowerTrench MOSFET 100 V, 24 A, 19.5 mΩ Features General Description „ Max rDS on = 19.5 mΩ at VGS = 10 V, ID = 7 A This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain


    Original
    FDMD82100L PDF