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    FDMC86240 Search Results

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    FDMC86240 Price and Stock

    onsemi FDMC86240

    MOSFET N-CH 150V 4.6A/16A 8MLP
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    DigiKey FDMC86240 Digi-Reel 5,975 1
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    FDMC86240 Cut Tape 5,975 1
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    FDMC86240 Reel 3,000 3,000
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    Avnet Americas FDMC86240 Reel 14 Weeks 3,000
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    FDMC86240 Bulk 1
    • 1 $2.63
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    Mouser Electronics FDMC86240 76,121
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    Verical FDMC86240 67,572 286
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    FDMC86240 6,877 286
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    FDMC86240 3,007 6
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    Arrow Electronics FDMC86240 Cut Strips 3,007 14 Weeks 1
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    Newark FDMC86240 Cut Tape 5,546 1
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    FDMC86240 Reel 3,000
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    Future Electronics FDMC86240 Reel 14 Weeks 3,000
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    Onlinecomponents.com FDMC86240
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    Bristol Electronics FDMC86240 820 3
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    Quest Components FDMC86240 656
    • 1 $3
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    Rochester Electronics FDMC86240 74,449 1
    • 1 $1.12
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    • 100 $1.05
    • 1000 $0.952
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    TME FDMC86240 1
    • 1 $1.89
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    • 100 $1.35
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    Richardson RFPD FDMC86240 3,000
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    Avnet Silica FDMC86240 15 Weeks 3,000
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    EBV Elektronik FDMC86240 16 Weeks 3,000
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    Fairchild Semiconductor Corporation FDMC86240

    N-Channel Power Trench® MOSFET
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    Win Source Electronics FDMC86240 23,139
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    • 100 $1.029
    • 1000 $0.836
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    FDMC86240 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDMC86240 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 16A POWER33 Original PDF

    FDMC86240 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    v5893

    Abstract: FDMC86240 33X3
    Text: FDMC86240 N-Channel Power Trench MOSFET 150 V, 16 A, 51 mΩ Features General Description „ Max rDS on = 51 mΩ at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original
    FDMC86240 v5893 FDMC86240 33X3 PDF

    FDMC86240

    Abstract: No abstract text available
    Text: FDMC86240 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 16 A, 51 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original
    FDMC86240 FDMC86240 PDF

    FDMC86240

    Abstract: No abstract text available
    Text: FDMC86240 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 16 A, 51 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original
    FDMC86240 FDMC86240 PDF

    FDMC86240

    Abstract: No abstract text available
    Text: FDMC86240 N-Channel Power Trench MOSFET 150 V, 16 A, 51 mΩ Features General Description ̈ Max rDS on = 51 mΩ at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original
    FDMC86240 FDMC86240 PDF

    FDMC86240

    Abstract: No abstract text available
    Text: FDMC86240 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 16 A, 51 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original
    FDMC86240 FDMC86240 PDF