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    FDI030N06 Price and Stock

    Flip Electronics FDI030N06

    N-CHANNEL POWERTRENCH MOSFET 60V
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    DigiKey FDI030N06 Tube 18,000 200
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    onsemi FDI030N06

    MOSFET N-CH 60V 120A I2PAK
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    DigiKey FDI030N06 Tube 1,000
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    Avnet Americas FDI030N06 Tube 0 Weeks, 2 Days 257
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    FDI030N06 Tube 4 Weeks 112
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    Newark FDI030N06 Bulk 1,000
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    Rochester Electronics FDI030N06 4,893 1
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    Flip Electronics FDI030N06 18,000
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    Fairchild Semiconductor Corporation FDI030N06

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    Bristol Electronics FDI030N06 998
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    Quest Components FDI030N06 798
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    Rochester Electronics FDI030N06 140 1
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    FDI030N06 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDI030N06 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 120A I2PAK Original PDF

    FDI030N06 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FDI030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		PDF FDI030N06

    FDI030N06

    Abstract: a2801
    Text: FDI030N06 tm N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDI030N06 FDI030N06 a2801

    Untitled

    Abstract: No abstract text available
    Text: FDI030N06 N-Channel tm PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDI030N06

    Untitled

    Abstract: No abstract text available
    Text: FDI030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		PDF FDI030N06 FDI030N06

    Untitled

    Abstract: No abstract text available
    Text: FDI030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDI030N06 FDI030N06

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS