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    onsemi FDD5N50NZFTM

    MOSFET N-CH 500V 3.7A DPAK
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    Aptina Imaging FDD5N50NZFTM

    Trans MOSFET N-CH 500V 3.7A 3-Pin(2+Tab) DPAK T/R
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    ComSIT USA FDD5N50NZFTM 10,000
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    Chip 1 Exchange FDD5N50NZFTM 5,291
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    FDD5N50NZF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDD5N50NZFTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V DPAK Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: FDD5N50NZF N-Channel UniFETTM FRFET MOSFET 500 V, 3.7 A, 1.75 Ω Features Description • RDS on = 1.47 Ω (Typ.) @ VGS = 10 V, ID = 1.85 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		PDF FDD5N50NZF 100nsec

    ultra fast recovery diode

    Abstract: No abstract text available
    Text: FDD5N50NZF N-Channel UniFETTM FRFET MOSFET 500 V, 3.7 A, 1.75  Features Description • RDS on = 1.47  (Typ.) @ VGS = 10 V, ID = 1.85 A UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and


    Original     		PDF FDD5N50NZF FDD5N50NZF ultra fast recovery diode

    Untitled

    Abstract: No abstract text available
    Text: UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75Ω Features Description • RDS on = 1.47Ω ( Typ.)@ VGS = 10V, ID = 1.85A • Low Gate Charge ( Typ. 9nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDD5N50NZF

    fdd5n50nzftm

    Abstract: FDD5N50NZF
    Text: UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75Ω Features Description • RDS on = 1.47Ω ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD5N50NZF fdd5n50nzftm FDD5N50NZF

    dpak mosfet

    Abstract: fairchild make f 32 diode
    Text: UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75Ω Features Description • RDS on = 1.47Ω ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD5N50NZF FDD5N50NZF dpak mosfet fairchild make f 32 diode