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    FDD18N20LZ Search Results

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    FDD18N20LZ Price and Stock

    onsemi FDD18N20LZ

    MOSFET N-CH 200V 16A DPAK
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    DigiKey FDD18N20LZ Reel 12,500 2,500
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    FDD18N20LZ Cut Tape 136 1
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    FDD18N20LZ Digi-Reel 1
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    Avnet Americas FDD18N20LZ Reel 4 Weeks 417
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    FDD18N20LZ Reel 26 Weeks 2,500
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    Mouser Electronics FDD18N20LZ 63,093
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    Verical FDD18N20LZ 5,000 2,500
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    FDD18N20LZ 2,282 70
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    Newark FDD18N20LZ Cut Tape 5,035 1
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    FDD18N20LZ Reel 2,500
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    FDD18N20LZ Reel 2,500
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    Future Electronics FDD18N20LZ Bulk 26 Weeks 2,500
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    FDD18N20LZ Reel 12 Weeks 2,500
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    Onlinecomponents.com FDD18N20LZ 2,500
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    Rochester Electronics FDD18N20LZ 12,500 1
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    Richardson RFPD FDD18N20LZ 2,500
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    Avnet Asia FDD18N20LZ 26 Weeks 2,500
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    Avnet Silica FDD18N20LZ 27 Weeks 2,500
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    EBV Elektronik FDD18N20LZ 28 Weeks 2,500
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    Master Electronics FDD18N20LZ 2,500
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    Fairchild Semiconductor Corporation FDD18N20LZ

    MOSFET N-CH 200V DPAK-3
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    Win Source Electronics FDD18N20LZ 24,000
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    • 100 $1.16
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    FDD18N20LZ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDD18N20LZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V DPAK-3 Original PDF

    FDD18N20LZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDD18N20LZ

    Abstract: Forward Reference Diode ic cgs 160v 110 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V
    Text: UniFET FDD18N20LZ TM N-Channel MOSFET 200V Logic, 16A, 0.125 Features Description • RDS on = 0.125( Max.) @ VGS = 10V, ID = 8A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDD18N20LZ FDD18N20LZ Forward Reference Diode ic cgs 160v 110 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V

    Untitled

    Abstract: No abstract text available
    Text: FDD18N20LZ N-Channel UniFETTM MOSFET 200 V, 16 A, 125 mΩ Features Description • R DS on = 125 mΩ (Typ.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDD18N20LZ

    FDD18N20LZ

    Abstract: ic cgs 160v 110
    Text: FDD18N20LZ N-Channel UniFETTM MOSFET 200 V, 16 A, 125 mΩ Features • R DS on = Description 125 mΩ( Max.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDD18N20LZ FDD18N20LZ ic cgs 160v 110

    Untitled

    Abstract: No abstract text available
    Text: UniFET FDD18N20LZ TM N-Channel MOSFET 200V Logic, 16A, 0.125 Features • RDS on = 0.125( Max.) @ VGS = 10V, ID = 8A • Low Gate Charge • Low Crss • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant


    Original     		PDF FDD18N20LZ

    E-MOSFET

    Abstract: emosfet R00C
    Text: INTEGRATED CIRCUITS DIVISION Application Note: AN-202 PRELIMINARY CPC1590 Application Technical Information AN-202-R00C PRELIMINARY 1 INTEGRATED CIRCUITS DIVISION 1 Using the CPC1590 Isolated Gate Driver IC The CPC1590 is an excellent choice for remote switching of DC and low frequency loads where


    Original     		PDF AN-202 CPC1590 AN-202-R00C E-MOSFET emosfet R00C