FC40V52S8 Search Results

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Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC40V52S8 5 .2 ~ 5 .8 G H z BAND 10W IN T E R N A L L Y M A TCH ED GaAs F E T DESCRIPTION The M G F C 4 0 V 5 2 5 8 is an internally impedance-matched GaAs power FET especially designed fo r use in 5 .2 — 5 .8 GHz band amplifiers. The herm etically sealed metal-ceramic