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    Text: L B 4 tiôSI1 Ü G 1 Ô G 7 3 723 • MITSUBISHI SEMICONDUCTOR <GaAs FET> FA01319A GaAs FET HYBRID IC DESCRIPTION F A 01 3 1 9 A is RF Hybrid IC designed for 1 .9G H z band small size hand held radio. FEATURES High efficiency High power 4 0 % 3 3 (dBm) •


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