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    Mitsubishi Electric MGF0951P

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    Bristol Electronics MGF0951P 1,388
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    FET K 1358

    Abstract: 951P MGF0951P
    Text: MITSUBISHI SEMICONDUCTOFkGaAs FET> PRELIMINARY M G F0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The F0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm


    OCR Scan     		MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA FET K 1358 951P PDF