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    F0906B Search Results

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    F0906B Price and Stock

    JRH Electronics 447HS531NF0906B

    CONNECTOR BACKSHELL
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    DigiKey 447HS531NF0906B Bulk 50 1
    • 1 $741.85
    • 10 $741.85
    • 100 $741.85
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    Glenair Inc 447HS531NF0906B

    MILITARY ACCESSORIES - Bulk (Alt: 447HS531NF0906B)
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    Avnet Americas 447HS531NF0906B Bulk 3 Weeks 1
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    Newark 447HS531NF0906B Bulk 25 1
    • 1 $513.8
    • 10 $308.55
    • 100 $134.15
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    Interstate Connecting Components 447HS531NF0906B
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    Mitsubishi Electric MGF0906B

    L, S BAND POWER GAAS FET RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET
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    ComSIT USA MGF0906B 525
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    Mitsubishi Electric MGF0906B01

    RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
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    ComSIT USA MGF0906B01 40
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    Glenair Inc 712HS839NF0906BT

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    Interstate Connecting Components 712HS839NF0906BT
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    F0906B Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> | M G F0906B | _ L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 6 B , GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. I S Unit: millimeters 17.5 FEATURES


    OCR Scan     		PDF F0906B 37dBm

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> F0906B L, S BAND POW ER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 6 B , GaAs FET w ith an N -channel schottky U n it: m illim e te rs gate, is designed fo r use in U H F band am plifiers. FEATURES • Class A operation


    OCR Scan     		PDF MGF0906B 100S5