Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2007A TF410 N-Channel JFET http://onsemi.com 40V, 50 to 130 A, 0.11mS, USFP Applications • Impedance conversion, infrared sensor applications Features • • • • Ultrasmall package facilities miniaturization in end products : 1.0mmx0.6mm×0.27mm max 0.3mm
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ENA2007A
TF410
--500pA
--20V,
A2007-6/6
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TF410
Abstract: No abstract text available
Text: TF410 Ordering number : ENA2007A SANYO Semiconductors DATA SHEET N-Channel Silicon Junction FET TF410 Impedance Converter, Infrared Sensor Applications Applications • Impedance conversion, infrared sensor applications Features • • • • Ultrasmall package facilities miniaturization in end products : 1.0mmx0.6mm×0.27mm max 0.3mm
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Original
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PDF
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TF410
ENA2007A
--500pA
--20V,
A2007-6/6
TF410
|
TF410
Abstract: No abstract text available
Text: TF410 Ordering number : ENA2007A SANYO Semiconductors DATA SHEET N-Channel Silicon Junction FET TF410 Impedance Converter, Infrared Sensor Applications Applications • Impedance conversion, infrared sensor applications Features • • • • Ultrasmall package facilities miniaturization in end products : 1.0mmx0.6mm×0.27mm max 0.3mm
|
Original
|
PDF
|
TF410
ENA2007A
--500pA
--20V,
A2007-6/6
TF410
|