EMA109 Search Results

EMA109 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
EMA109		Excelics Semiconductor	MESFET MMICs		Original	PDF
EMA109-SOT89		Excelics Semiconductor	0.5 - 3.0 GHz High Linearity Power MMIC		Original	PDF

EMA109 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
EMA109-SOT89 Abstract: No abstract text available Text: EMA109-SOT89 0.5 – 3.0 GHz High Linearity Power MMIC ISSUED DATE: 07-01-04 0.065-0.069 0.177-0.183 0.065-0.075 FEATURES 0.015-0.025 0.029-0.031 Point-to-point and point-to-multipoint radio Military Radar Systems 0.044 DRAIN SOURCE GATE APPLICATIONS • •	Original	PDF	EMA109-SOT89 -40dBc EMA109-SOT89
EMA109 Abstract: No abstract text available Text: EMA109 0.5 – 3.0 GHz High Linearity Power MMIC UPDATED 11/11/2004 FEATURES • • • • • • 0.5 – 3.0 GHz BANDWIDTH 24.0dBm TYPICAL OUTPUT POWER -45dBc OIMD3 @ 14dBm EACH TONE Pout 11.0 dB TYPICAL POWER GAIN SINGLE BIAS SUPPLY 100% DC TESTED Dimension: 760um X 700um	Original	PDF	EMA109 -45dBc 14dBm 760um 700um 10MHz, 14dBm EMA109C EMA109
EPA080A-100P Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.	Original	PDF

Catalog Datasheet

MFG & Type

PDF

Document Tags

EMA109-SOT89

Abstract: No abstract text available
Text: EMA109-SOT89 0.5 – 3.0 GHz High Linearity Power MMIC ISSUED DATE: 07-01-04 0.065-0.069 0.177-0.183 0.065-0.075 FEATURES 0.015-0.025 0.029-0.031 Point-to-point and point-to-multipoint radio Military Radar Systems 0.044 DRAIN SOURCE GATE APPLICATIONS • •

Original

PDF

EMA109-SOT89 -40dBc EMA109-SOT89

EMA109

Abstract: No abstract text available
Text: EMA109 0.5 – 3.0 GHz High Linearity Power MMIC UPDATED 11/11/2004 FEATURES • • • • • • 0.5 – 3.0 GHz BANDWIDTH 24.0dBm TYPICAL OUTPUT POWER -45dBc OIMD3 @ 14dBm EACH TONE Pout 11.0 dB TYPICAL POWER GAIN SINGLE BIAS SUPPLY 100% DC TESTED Dimension: 760um X 700um

Original

PDF

EMA109 -45dBc 14dBm 760um 700um 10MHz, 14dBm EMA109C EMA109

EPA080A-100P

Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.

Original

PDF