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    Abstract: No abstract text available
    Text: EM48F010 1024K CMOS FLASH EEPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features m 128K Byte FLASH Erasable Non-Volatile Memory m FLASH EEPROM Cell Technology • ■ ■ ■ ■ ■ ■ Electrical Chip and 1024 Byte Sector Erase Input Latches for Writing and Erasing


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    PDF EM48F010 1024K M4BF010) M48F010) E48F010) W8F010 MD400069/A E/M48F010 48F010