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    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM3DK512A •General description ■Features ELM3DK512A-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • ■Maximum absolute ratings Parameter Vds=30V Id=22A Rds(on) < 2.8mΩ (Vgs=10V)


    Original     		PDF ELM3DK512A ELM3DK512A-S 100ms Feb-23-2012

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM3DK512A-S •General description ■Features ELM3DK512A-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=22A Rds(on) < 2.8mΩ (Vgs=10V) Rds(on) < 3.6mΩ (Vgs=4.5V)


    Original     		PDF ELM3DK512A-S ELM3DK512A-S 100ms Feb-23-2012