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    EGNC210MK

    Abstract: JESD22-A114 EGNC210M EGNC210
    Text: EGNC210MK GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.5dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Linear Gain : 17.5dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGNC210MK EGNC210MK JESD22-A114 EGNC210M EGNC210

    17127

    Abstract: EGNC210MK
    Text: EGNC210MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 53.5dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Linear Gain : 17.5dB(typ.) @ f=0.9GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGNC210MK 25deg 17127 EGNC210MK

    EGNC210MK

    Abstract: No abstract text available
    Text: EGNC210MK GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.5dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Linear Gain : 17.5dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGNC210MK Stora37 -j100 EGNC210MK