EG01Z
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL EG01Y Z -EG01C(Z) VOLTAGE RANGE: 70 - 1000 V CURRENT: 0.5 - 1.0 A HIGH EFFICIENCY RECTIFIER FEATURES DO - 41 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with freon, alcohol, lsopropand and
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EG01Y
---EG01C
94v-0
DO-41,
MIL-STD-202,
34grams
EG01Y
EG01Z
EG01A
EG01C
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AG01Y
Abstract: EG01A EG01Y EL02Z EN01Z
Text: I F AV (A) Part Number IFSM (A) Tj (°C) 50Hz IF V = V V = V R RM R RM (A) max max t rr IF / I FP (mA) 2 (ns) IF / I FP (mA) Rth (j- ) Mass Fig. (°C/W) (g) No. 25 –40 to +150 1.2 1.0 100 0.5 100 100 100/100 50 100/200 22 0.13 EG01Y 1.0 30 –40 to +150
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100mA/100mA
100mA/200mA
AG01Y
AG01Y
EG01A
EG01Y
EL02Z
EN01Z
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Untitled
Abstract: No abstract text available
Text: Ultra-Fast-Recovery Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter I F（ AV） （A） VRM （V） Type No. AG01Y 70 AG01Z 200 AG01 400 AG01A 600 EG01Y 70 EG01Z 200 EG01 400 EG01A 600 IFSM （A） Tstg Tj （℃） （℃）
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Ta100
AG01Y
AG01Z
AG01A
EG01Y
EG01Z
EG01A
AG01Z00
UL94V0
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Untitled
Abstract: No abstract text available
Text: EG01Y ULTRA FAST RECOVERY RECTIFIER DIODE PRV : 70 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency 1.00 25.4
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EG01Y
DO-41
UL94V-O
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: EG01Y-EG01C High Efficiency Rectifiers VOLTAGE RANGE: 70 - 1000 V CURRENT: 0.5 - 1.0 A Features DO - 41 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with freon, alcohol, lsopropand and similar solvents
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EG01Y-EG01C
94v-0
DO-41,
34grams
EG01Y
EG01Y
EG01C
EG01Z
EG01Z-EG01
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EG01C
Abstract: EG01 EG01A EG01Y EG01Z
Text: BL GALAXY ELECTRICAL EG01Y Z -EG01C(Z) VOLTAGE RANGE: 70 - 1000 V CURRENT: 0.5 - 1.0 A HIGH EFFICIENCY RECTIFIER FEATURES DO - 41 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with freon, alcohol, lsopropand and
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PDF
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EG01Y
---EG01C
94v-0
DO-41,
MIL-STD-202,
34grams
EG01Y
EG01Z
EG01A
EG01C
EG01C
EG01
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EG01
Abstract: EG01C EG01A EG01Y EG01Z
Text: BL GALAXY ELECTRICAL EG01Y Z -EG01C(Z) VOLTAGE RANGE: 70 - 1000 V CURRENT: 0.5 - 1.0 A HIGH EFFICIENCY RECTIFIER FEATURES DO - 41 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with freon, alcohol, lsopropand and
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EG01Y
---EG01C
94v-0
DO-41,
MIL-STD-202,
34grams
EG01Y
EG01Z
EG01A
EG01C
EG01
EG01C
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EG01Y
Abstract: No abstract text available
Text: EG01Y ULTRA FAST RECOVERY RECTIFIER DIODE PRV : 70 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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EG01Y
DO-41
UL94V-O
MIL-STD-202,
EG01Y
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MN638S
Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein
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infringement0718
H1-C01EC0-0110015TA
MN638S
STA464C
sk 3001s
relay Re 04501
spf0001
sta509a
Schottky Diode 80V 6A
2SD2633
sk 5151s
SLA2403M
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AG01Y
Abstract: AL01Z AG01A AG01 AG01Z EG01Y EG01Z SPX-62S SPX-G32S
Text: Part Number IFSM A Tj (°C) 50Hz IF V = V V = V R RM R RM (A) max max t rr IF / I FP (mA) 2 (ns) IF / I FP (mA) Rth (j- ) Mass Fig. (°C/W) (g) No. 1.0 25 –40 to +150 1.2 1.0 100 0.5 100 100 100/100 50 100/200 22 0.13 1.0 30 –40 to +150 1.2 1.0 100 0.5
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100mA/100mA
100mA/200mA
AG01Y
EG01Y,
EG01Z,
EG01Y
AG01Y
AL01Z
AG01A
AG01
AG01Z
EG01Y
EG01Z
SPX-62S
SPX-G32S
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FMPG2F
Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Text: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179
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RBV-60
RBV-40
FMPG2F
marking RBV - 401
3f series surface mount transistor
FMXA-2202S
RBV-406M
SJPM-H4
FMV-3HU DIODE
diode eu02
rectifier rbv-606
marking RBV
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AG01A
Abstract: fml-g16s EG01A FMC-26U FMD-G26S FMG-G26S FMG-G36S FMN-G16S FMX-G16S FMX-G26S
Text: VRM V Package Part Number Surface Mount MP3-306 Axial 600 Frame-2Pin IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) 1 2 : I F / I R (=I F) 90% Recovery Point
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MP3-306
100mA/100mA
100mA/200mA
EG01Y,
EG01Z,
EG01Y
AG01A
fml-g16s
EG01A
FMC-26U
FMD-G26S
FMG-G26S
FMG-G36S
FMN-G16S
FMX-G16S
FMX-G26S
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SJPL
Abstract: No abstract text available
Text: 4-3 Ultrafast Recovery Diodes ●Surface-Mount VRM V 200 IF (AV) (A) Values in parentheses are for the products with heatsinks 0.9 1.0 1.0 2.0 1.5 1.5 Package Surface-Mount (SFP) Surface-Mount (SFP) Surface-Mount (SJP) Surface-Mount (SFP) Surface-Mount (SJP)
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SFPL-52
SFPL-62
SFPX-62
SJPL
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AG01Y
Abstract: EG01Y rg4z RN 3Z
Text: Part Number IFSM A Tj (°C) 50Hz IF V = V V = V R RM R RM (A) max max t rr IF / I FP (mA) 2 (ns) IF / I FP (mA) Rth (j- ) Mass Fig. (°C/W) (g) No. 1.0 25 –40 to +150 1.2 1.0 100 0.5 100 100 100/100 50 100/200 22 0.13 1.0 30 –40 to +150 1.2 1.0 100 0.5
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100mA/100mA
100mA/200mA
AG01Y
AG01Y
EG01Y
rg4z
RN 3Z
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Intelligent <Intelligent Power Power Module> Module> PS51259-A PS51259-A TRANSFER-MOLD TRANSFER-MOLD TYPE TYPE INSULATED INSULATED TYPE TYPE PS51259-A INTEGRATED POWER FUNCTIONS • Single phase AC input, DC output IGBT/FWD converter bridge
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PS51259-A
20Arms
AC100
EG01Y
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1106S
Abstract: No abstract text available
Text: 4-3 Ultrafast Recovery Diodes ●Surface-Mount VRM V 200 IF (AV) (A) Values in parentheses are for the products with heatsinks 0.9 1.0 1.0 2.0 1.5 1.5 Package Surface-Mount (SFP) Surface-Mount (SFP) Surface-Mount (SJP) Surface-Mount (SFP) Surface-Mount (SJP)
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SFPL-52
SFPL-62
SFPX-62
EG01Y,
EG01Z,
EG01Y
1106S
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alternator rectifier diode 50a
Abstract: EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h
Text: Bulletin No C01EA0 Jun., 1999 DEVICES for AUTOMOTIVE CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein
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C01EA0
H1-C01EA0-9906015TA
alternator rectifier diode 50a
EL 14v 4c
STA509A equivalent
sta509a
smd diode marking A05
CTB-34M
HALL SENSOR A 22L
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
TRANSISTOR SMD MARKING CODE 12w
Zener diode smd marking code 22h
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CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A
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5CE120C
5KE120CA
5CE120CA
5CE12A
5KE12A
5CE12C
5KE12CA
5CE12CA
CAT7105CA
mp1410es
G547E2
G547H2
G547F2
P5504EDG equivalent
G547I1
SP8K10
SP8K10SFD5TB
LD1117Al
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fn651
Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Text: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102
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2SA744
2SA745
2SA746
2SA747
2SA764
2SA765
2SA768
2SA769
2SA770
2SA771
fn651
CTB-34D
2SC5586
hvr-1x7
STR20012
sap17n
2sd2619
RBV-4156B
SLA4037
2sk1343
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EG01A V1
Abstract: CTB-34S
Text: Í SANKEN ELECTRI C U S A h e í I v ì i o ? 1 ! uüonaiä o | Ultra High Speed Rectifier Diodes • V rm:7 0 ~ 1 0 0 0 V ■ io :0 .5 ~ i.5 A T* —i* AG/AL/EGs.,«/EL/RG Absolute Maximum Rating Type No. AG01Y AG01Z AG01 AG01A AL01Y AL01Z EG01Y EG01Z EG01
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AG01Y
AG01Z
AG01A
AL01Y
AL01Z
EG01Y
EG01Z
EG01A
EG01A V1
CTB-34S
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FMX-G12S
Abstract: FMP-G12S FMPG12S
Text: ULTRA-FAST-RECOVERY RECTIFIER DIODES Type No. V rm lo If s m V (A) (A) VF Ir Max. @ lF trr (mA) (ns) Type No. V rm lo If s m (V) (A) (A) 1.5 (A) 25 1.0 10nA 50 RG 2Y 70 SFPL-52 200 0.9 SFPL-62 200 1.0 RG 2Z 200 AL01Z 200 1.0 25 0.98 1.0 0.1 50 RG 2 400 1.2
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OCR Scan
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SFPL-52
SFPL-62
AL01Z
AG01Y
AG01Z
AG01A
EG01Y
EG01Z
EG01A
EG01C
FMX-G12S
FMP-G12S
FMPG12S
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Ao6100
Abstract: No abstract text available
Text: SAN KEN E L E C T R IC CO L T » 35 E Ultra Fast Recovery Diodes 1 H h T IR O T M l .0 0 0 0 4 1 3 T B S A K J T p & J -o V Vrm: 70~1000V B io :0.4~5.0A '¿7' SFPL/AG/AL/EG/EL/RG/RL Rating/ Characteristics Absolute Maximum Ratings V rsm V) V rm (V) If s M
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OCR Scan
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PDF
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SFPL-52
SFPL-62
AG01Y
AG01A
AL01Z
EG01Y
EG01Z
EG01A
EG01C
RB602
Ao6100
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rl2z
Abstract: E83S FMP-G12S 1Z200 marking ag01 AG01 AG01A AG01Y AG01Z EG01
Text: SANKEN E L E C T R IC CO LT » 35E 1 H T IR O T M l .0 0 0 0 4 1 3 T B S A K J T p & J -o V Ultra Fast Recovery Diodes h Vrm:70~1000V Bio:0.4~5.0A '¿7' SFPL/AG/AL/EG/EL/RG/RL R ating/ Characteristics Absolute Maximum Ratings Vrsm V) V rm (V) SFPL-52 SFPL-62
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OCR Scan
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PDF
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SFPL-52
SFPL-62
AG01Y
AG01Z
AG01A
AL01Z
rl2z
E83S
FMP-G12S
1Z200
marking ag01
AG01
AG01A
EG01
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RL 4A
Abstract: No abstract text available
Text: lUltra-Fast-Recovery Rectifier Diodes Ta=25c V f 4 Is'S i fjtfs ÜV (niA) 1 max • fta * “ max max *n Vkm SFPL 52 200 •62 200 fi'm 0.9 To” 70 01Z 200 01 400 01A 600 O.b 70 1.0 0 !Z 400 01A 600 01 C EG 1Y _ 1.0 70 1_ 400 Z 1^ 600 _ _ _ 400 .2 0.1
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OCR Scan
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AG01Y
EG01Y_
-602L
RL 4A
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