QLCC 24
Abstract: No abstract text available
Text: EDI82136C ^ED I B a d r o n i c D n l g n t Inc. 1 High Performance Megabit SRAM 32Kx36 Monolithic Asynchronous/Latched Address Monolithic Static RAM M M F T O f lM T M Features The EDl82136Cisa1,179,648bitAsynchronousmemoty core with transparent address and enable latches in fie
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EDI82136C
32Kx36
EDl82136Cisa1
648bitAsynchronousmemoty
EDI82136C,
daparitydeselectcontrolforx32bitoperation
BydrecSysuppor1ingx32design
32Kx18
QLCC 24
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Untitled
Abstract: No abstract text available
Text: ^ E D I B^ctronlc D««lgnc Inc. . Â IM IO I D iF O M Â T M Features EDI82136Cisa1,179,648bitAsynchroriousmemofy core with transparent address and enable latches in the advanced peripheral circuitry. This device is ideally suited for all x32 and x36 bit wide, high-performance memory sub
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32Kx36
DQ0-DQ31
EDI82136C
EDI82136C12GC
EDI82136C15GC
EDI82136C17GC
EDI82136C20GC
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Untitled
Abstract: No abstract text available
Text: ^E D I E D I8 2 1 3 6 C H /fif/j Performance Megabit SRAM Badronic o«ign. me. 32Kx36 Monolithic Asynchronous/Latched Address Monolithic Static RAM liF Û M Â T O Û i Features EDI82136Cisa1,179,648bitAsynchronousmemory core with transparent address and enable latches in the
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32Kx36
TheEDI82136Cisa1
648bitAsynchronousmemory
EDI82136C,
daparitydeselectconfrolforx32bitoperation
EDI82136C
EDI82136C12GC
EDI82136C15GC
EDI82136C17GC
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Untitled
Abstract: No abstract text available
Text: ^EDI Electronic Designs tr>c. ' , transparent latches, dual polarity single enable, master write control, master output enable, four individual byte selects x8 orx9, andaparitydeselectcontrolforx32bitoperation. This feature provides flexible control over the device array during
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daparitydeselectcontrolforx32bitoperation
A0-A14
32Kx18
DQ16-DQ31
EDI82136C
EDI82136C20JB
EDI82136C25JB
EDI82136C30JB
EDI82136C35JB
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