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    Abstract: No abstract text available
    Text: m i EDI784MSV-RP 4Megx8 Ruggedized Plastic NAND Flash ELECT R O N IC DESlÊN S. IN C 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304)x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high


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    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI784MSV-RP ELECTRONIC DESIGNS. INC 4Megx8 Ruggedized Plastic NAND Flash 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high


    OCR Scan     		PDF EDI784MSV-RP EDI784MSV 528-byte I784M

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI784MSV-RP ELECTRONIC DESIGNS. INC 4Megx8 Ruggedized Plastic NAND Flash 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high


    OCR Scan     		PDF EDI784MSV-RP EDI784MSV50SI EDI784MSV-RP ECOU8274