"Electronic designs inc"
Abstract: 24128 EDI414097C70BB EDI414097C70LZB EDI414097C70LZI EDI414097C80BB EDI414097C80LZB
Text: ^EDI EDI414097C 4Megx1 Fast Page DRAM ELECTRONIC DESIGNS, INC ' 4Megabitx 1 Dynamic RAM CMOS, Monolithic The EDI414097C is a high performance, low power CMOS Dynamic RAM organized as 4Megabit x1. During Read and Write cycles each bit is addressed through 22 address bits which are entered 11 at a time A0
|
OCR Scan
|
PDF
|
EDI414097C
100ns
EDI414097C
"Electronic designs inc"
24128
EDI414097C70BB
EDI414097C70LZB
EDI414097C70LZI
EDI414097C80BB
EDI414097C80LZB
|
Untitled
Abstract: No abstract text available
Text: EDI414097C MDi Electronic Dôiign» Inc. • High Performance Four Megabit Monolithic DRAM 4Mx1 Dynamic RAM CMOS, Monolithic Features The EDI414097C is a high performance, low power CMOS Dynamic RAM organized as 4Megabit x1. During Read and Write cycles each bit is addressed
|
OCR Scan
|
PDF
|
EDI414097C
EDI414097C
EDI414097C70LZB
EDI414097C80LZB
ED1414097C100LZB
|
CA9V
Abstract: No abstract text available
Text: EDI414097C % E U . 4Megx1 Fast Page DRAM E L E C T R O N I C D E S I G r s ß .I N C i 4Megabitx 7Dynamic RAM CMOS, NbnoMtoc The EDI414097C is a high performance, low power CM O S Features Dynamic RAM organized as 4Megabit x1. During Read and Write cycles each bit is addressed
|
OCR Scan
|
PDF
|
EDI414097C
EDI414097C
100ns
EDI414097C7QLZB
414097C70L2I
24/28Pin
24/28P
EDM14M7C
3f97ECO
CA9V
|
Untitled
Abstract: No abstract text available
Text: ^EDl EDI414097C 4Megx1 Fast Page DRAM ELfCTROMCDESGN&NC 4M egabitx 1 Dynamic RAM CMOS, Monolithic F e a tu re s 4Mx1 bit CMOS Dynamic Random Access Memory • Access Times 70,80,100ns • 16ms Refresh Rate • Low Operating Power Dissipation • Low Standby Power
|
OCR Scan
|
PDF
|
EDI414097C
EDI414097C
entered11atatime
38cC/W
050TYÎ
01581USA
|
Untitled
Abstract: No abstract text available
Text: ^EDI EDI414097C 4Megx1 Fast Page DRAM ELECTRONIC DESIGNS, INC ' 4Megabitx 1 Dynamic RAM CMOS, Monolithic The EDI414097C is a high performance, low power CMOS ¡Features Dynamic RAM organized as 4Megabit x1. During Read and W rite cycles each bit is addressed
|
OCR Scan
|
PDF
|
EDI414097C
EDI414097C
100ns
24/28Pin
|
Untitled
Abstract: No abstract text available
Text: ^EDI ELECTPOWC MSGNS NC. | INSIDE SECTION 3 . Density 1 Megabit 1 Megabit 1 Megabit 1 Megabit 4 Megabits 4 Megabits 4 Megabits 4 Megabits 4 Megabits 4 Megabits 16 Megabits 16 Megabits 18 Megabits 16 Megabits Organization IM xl IM xl 1Mx1 1Mx1 1Mx4 1Mx4 1Mx4
|
OCR Scan
|
PDF
|
BH411024C-ZB
EDI411024C-NB
EDI411024C-FB
EDI411024C-QB
EDI441024C-LZB
EDI441024C-BB
EDI441024C-FB
EDI414097C-LZB
E0W14Q97C-BB
EDI414087C-FB
|
128kx8
Abstract: EDI88130 32 PIN edi84256
Text: moi Selector Guide ELECTRONIC DESIGNS INC. Density Oraanization Part No. Speed ns Max Current (mAl Packaae Paae x32 Flash 4 Megabits 4 Megabits 128KX32 4 Megabits 4 Megabits 128KX32 128Kx32 EDI7C32128C-JM EDI7M32128C-GB 120-200 120-200 250 250 68 lead JLCC
|
OCR Scan
|
PDF
|
128KX32
EDI7C32128C-JM
EDI7M32128C-GB
EDI5C32128C-JM
EDI5M32128C-GB
64KX32
128KX32
128kx8
EDI88130
32 PIN
edi84256
|