E424G Search Results

E4241

Abstract: E424EDT E424GDT E424IDT E424SRDT E424YDT E424-3
Contextual Info: www.eLED.com T-1 3mm CYLINDRICAL LED Package Dimensions LAMPS E424IDT E424EDT E424GDT E424YDT HIGH EFFICIENCY RED E424SRDT SUPER BRIGHT RED ORANGE GREEN YELLOW Features 1.CYLINDRICAL TYPE, TOP DIFFUSED. 2.LOW POWER CONSUMPTION. 3.I.C. COMPATIBLE. 4.RELIABLE AND RUGGED.

flash jedec dip 32-pin

Abstract: MSM28F101
Contextual Info: SÛE D b?E424G O K I GOlBMbl SEMICONDUCTOR X IO K I J GROUP O K I semiconductor MSM 28 F 101 1 M BIT 128K 4T7 T - W J É , - \3>~ZQ> : 8 C M O S FLASH M EM ORY GENERAL DESCRIPTION T h e M S M 2 8 F 101 is a high speed 12 8 K x 8-bit Flash erasable and electrically reprogram m able

32-PIN

Abstract: A10E MSM51V16900-70 MSM51V16900-80
Contextual Info: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM514280 /SL_ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514280/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate the MSM514280/SL is OKI's CMOS silicon gate process technology.

Contextual Info: E2D0017-27-42 O K I Semiconductor M S M 6652/53/54/55/56-xxx, M SM 6652A/53A/ 54A/55A/56A/58A-xxx, MSM66P54-XX, MSM66P56-xx Under development , MSM6650 Internal Mask ROM Voice Synthesis 1C, Internal One-Time-Programmable (OTP) ROM Voice Synthesis 1C, External ROM Drive Voice Synthesis 1C

Contextual Info: O K I Semiconductor MSM534021B 524,288-Word x 8-Bit Mask ROM DESCRIPTION The OKI MSM534021B is a high-speed silicon gate CMOS Mask ROM with 524,288-word x 8-bit capacity. The MSM534021B operates on a single 5.0 V power supply and is TTL compatible. The chip's asynchro­

001704 711 02

Abstract: 88I9 VOICE RECORDER IC SHARP IC 701 I X11 MSM6595 MSM6688 MSM6788 MSM6791 PJ 909 pj 939
Contextual Info: OKI Semiconductor MSM6788 SBC SOLID-STATE RECORDER LSI GENERAL DESCRIPTION The M S M 6788 is a solid-state-recorder developed using the Sub Band Coding SBC m ethod. By externally connecting a m icrophone, a speaker, a speaker drive am plifier, and dedicated DRAM

Contextual Info: OKI electronic components OC800_ Reflector-Type Photo Interrupter GENERAL DESCRIPTION The OC8OOis a reflector-type photo interrupter that contains a high-output infrared light-emitting diode and high-sensitivity phototransistor. FEATURES • High output current

SIGMA as 226

Abstract: MSM7540 MSM7540GS MSM7560 MSM7560GS One-chip telephone IC
Contextual Info: O K I Semiconductor MSM7540 / MSM7560 5V Single-Rail ADPCM/PCM CODECs D E S C R IP TIO N The MSM 7540 and M SM 7560 are single-rail, low-voltage, full-duplex ADPCM CODECs which perform voice digitization using presampling and reconstruction filters for transm it and receive operation in PCM

Contextual Info: O K I Semiconductor MSM51V16160A 1,048,576-Word x 16-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM51V16160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16160A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16160A is

Contextual Info: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSC23CV232A-XXBS4 2,097,152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23CV232A-xxBS4 is a fully decoded 2,097,152-word x 32-bit CMOS Dynamic Random Access Memory Module composed of four 16-Mb DRAMs 2M x 8 in TSOP packages

Contextual Info: O K I Sem iconductor M SM6650 External ROM Drive Speech Synthesis LSI GENERAL DESCRIPTION MSM6650, a successor to OKI's MSM6376 speech synthesis LSI, can externally store d ata by directly connecting a m axim um 64 M bit ROM or EPROM. The PCM m ethod is ad d ed to the

Contextual Info: O K I Semiconductor MSM51V17170_ 1,048,576-Word x 16-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V17170 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the MSM51V17170 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM51V17400 4,194,304-Word x 4-Bit D Y N A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V17400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM51V17400 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM5116160 _ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160 is a 1,048,576-word x 16-bit dynam ic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160 achieves high integration, high-speed operation, and low-power

oki m6650

Abstract: m6650 oki msm6376 zd 3.1v CD T3 32 F11 HEM BTU 10/400 AR76 QFP64-P-1420-V1K PRBC MSM6650
Contextual Info: O K I Sem iconductor MSM6650 External ROM Drive Speech Synthesis LSI GENERAL D ESCR IPTIO N MSM6650, a successor to OKI's MSM6376 speech synthesis LSI, can externally store d ata by directly connecting a m axim um 64 M bit ROM or EPROM. The PCM m ethod is ad d ed to the

MSM511664-10

Abstract: MSM511664-80
Contextual Info: SflE D • b724240 0012=111 5 ^ O K I ■ OKIJ SEMICONDUCTOR GROUP : O K I semiconductor_—r-qfe-z*»MSM 511664 _ 65,536-WORD X ~ h 16-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM511664 is a new generation dynamic RAM organized as 65,536 words x 16 bits. Thé