IXTD08N100P-1A
Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types
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Text: Schottky Diode Chips V Type HWH V avu Te e R*oc »,ipSilfP RHIX. 2S*C 125*0 mA mA V V A c K/W if c s . 48*C A DWS19 DWS 29 15 20 35 135 130 1.4 1.1 350 660 10 20 200 350 0.41 0.39 20 40 DWS17 25 25 125 1.4 330 10 80 0.43 35/45 10 16 25 60 157 159 148 120 2.5
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Text: 8.36±0.13 N 0 0 ± 0 .2 5 Ì I r\ £ Ï I Ì w !> O O O o o J o o o o o O O O SHEET 413 w J V ^ DW S17W 2PN— XX — XX X — H 1) (2 ) uuuuuuuu 4.75 _ L H F E ÏÏF E F (1)Current Rating 10:10A Blank:20A 30:30A 40:40A (2)Contact Plating Blank:Gold Flash Plated
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DWS17W2PNâ
A0WS17W2PN-XX-XXX-H
DWS17W2PN-XX-H--
DWS17W2PN-XXâ
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Text: File No. SHEET 413 1/1 S P E C IF IC A T IO N C u r r e n t Rating: Signal C o nta c t:5 A m p Power Contact: 1 0 ~ 4 0 A m p O perating T e m p e ra t u re : —55 "C~1 2 5 ”C n s u la to r R e s is ta n o e :5 0 0 0 M eg a o h m s Min. C o nta ct Resistanc e: 10 Milliohms Max.
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DWS17W2Pâ
DWS17W2P-H
DWS17W2P-XX-H
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