MT-2-A1-B
Abstract: DSA8101
Text: DSA8101 Tentative Total pages page DSA8101 Silicon PNP epitaxial planar type For low-frequency output amplification Marking Symbol 4C Package Code : MT-2-A1-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DSA8101
MT-2-A1-B
DSA8101
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DSA8101
Abstract: DSA7101 DSC7101 ZJD00361AED
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSA7101 Silicon PNP epitaxial planar type For low frequency amplification Complementary to DSC7101 DSA8101 in MiniP3 type package • Features Package Contributes to miniaturization of sets, reduction of component count.
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2002/95/EC)
DSA7101
DSC7101
DSA8101
DSA7101
DSC7101
ZJD00361AED
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSA7101 Silicon PNP epitaxial planar type For low frequency amplification Complementary to DSC7101 DSA8101 in MiniP3 type package • Features Package Low collector-emitter saturation voltage VCE(sat)
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Original
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PDF
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2002/95/EC)
DSA7101
DSC7101
DSA8101
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSA7101 Silicon PNP epitaxial planar type For low frequency amplification Complementary to DSC7101 DSA8101 in MiniP3 type package • Features Package Low collector-emitter saturation voltage VCE(sat)
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Original
|
PDF
|
2002/95/EC)
DSA7101
DSC7101
DSA8101
DSA7101
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