CANCELLER
Abstract: TMS 3450 MT93L00A MT93L04 MT93L04A MT93L04AG RP15 wbd4
Text: MT93L04A 128-Channel Voice Echo Canceller Preliminary Information DS5524 Features • • • • • • MT93L04 is a Multi-chip Module MCM consisting of 4 MT93L00 devices thus providing 128 channels of 64 msec Echo Cancellation. Each device (MT93L00) is independent of the
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MT93L04A
128-Channel
DS5524
MT93L04
MT93L00
MT93L00)
CANCELLER
TMS 3450
MT93L00A
MT93L04A
MT93L04AG
RP15
wbd4
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bi-directional switches IGBT
Abstract: DIM400PBM17-A000
Text: DIM400PBM17-A000 DIM400PBM17-A000 IGBT Bi-Directional Switch Module DS5524-2.3 June 2008 LN26123 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS
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DIM400PBM17-A000
DS5524-2
LN26123)
DIM400PBM17-A000
170arantee
bi-directional switches IGBT
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dim800ddm12
Abstract: DIM800DDM12-A000
Text: DIM800DDM12-A000 DIM800DDM12-A000 Dual Switch IGBT Module Preliminary Information DS5528-1.1 March 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS
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DIM800DDM12-A000
DS5528-1
DIM800DDM12-A000
dim800ddm12
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DIM800DDM12-A000
Abstract: DIM800DDM12-A
Text: 6 3 Replaces DS5528-4 FEATURES ±0.2 • ±0.2 10µs Short Circuit Withstand 18 6 x O7 Dual Switch IGBT Module DS5528-5 June 2014 LN31688 14 ±0.2 11.5 ±0.2 DIM800DDM12-A000 KEY PARAMETERS 28 ±0.5 High44 Thermal ±0.2 Cycling Capability Non Punch
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DS5528-4
DS5528-5
LN31688)
DIM800DDM12-A000
DIM800DDM12-A000
DIM800DDM12-A
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DGT305RE
Abstract: No abstract text available
Text: DGT305RE DGT305RE Reverse Blocking Gate Turn-off Thyristor DS5520-4 July 2014 LN31742 FEATURES KEY PARAMETERS ITCM 700A VDRM 1800V High Reliability In Service IT(AV) 240A • High Voltage Capability dVD/dt 500V/µs ■ Fault Protection Without Fuses diT/dt
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DGT305RE
DS5520-4
LN31742)
DGT305RE
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DIM800DDM12-A000
Abstract: No abstract text available
Text: DIM800DDM12-A000 DIM800DDM12-A000 Dual Switch IGBT Module Preliminary Information Replaces issue March 2002, version DS5528-1.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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DIM800DDM12-A000
DS5528-1
DS5528-2
DIM800DDM12-A000
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K2667
Abstract: No abstract text available
Text: MT93L00A Multi-Channel Voice Echo Canceller Preliminary Information Features • • • • • • • • • • • • • • • • • DS5525 Independent multiple channels of echo cancellation; from 32 channels of 64ms to 16 channels of 128ms with the ability to mix
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MT93L00A
128ms
2100Hz
K2667
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bi-directional switches IGBT
Abstract: DIM800DDM12-A000
Text: DIM800DDM12-A000 DIM800DDM12-A000 Dual Switch IGBT Module Replaces July 2002, version DS5528-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5528-3.0 March 2003
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DIM800DDM12-A000
DS5528-2
DS5528-3
3300arantee
bi-directional switches IGBT
DIM800DDM12-A000
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DIM2400ESM12-A000
Abstract: No abstract text available
Text: DIM2400ESM12-A000 DIM2400ESM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5536-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5529-3.0 March 2003
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DIM2400ESM12-A000
DS5536-2
DS5529-3
33arantee
DIM2400ESM12-A000
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Untitled
Abstract: No abstract text available
Text: DGT305RE DGT305RE Reverse Blocking Gate Turn-off Thyristor Replaces February 2002 version, issue DS5520-2.0 DS5520-3.0 July 2004 FEATURES KEY PARAMETERS ITCM 700A VDRM 1800V High Reliability In Service IT AV 240A • High Voltage Capability dVD/dt 500V/µs
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DGT305RE
DS5520-2
DS5520-3
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tel 18818
Abstract: TBC 547 B preamplifier at 15 GHz TBC 547 B* TRANSISTOR SL2101 BB555 SL2100 115 ssb lob
Text: SL2101 Single chip synthesised broadband converter with programmable power DS5526 Features • • • • • • • • • • Single chip synthesised broadband solution Compatible with both up converter and downconverter requirements in double conversion tuner applications
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SL2101
DS5526
SL2100
tel 18818
TBC 547 B
preamplifier at 15 GHz
TBC 547 B* TRANSISTOR
SL2101
BB555
SL2100
115 ssb lob
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preamplifier at 15 GHz
Abstract: BB555 SL2100 SL2101 30572 ipip3
Text: SL2101 Synthesised broadband converter with programmable power Datasheet DS5526 Features • • • • • • • • • • Single chip synthesised broadband solution Compatible with both up converter and downconverter requirements in double conversion tuner applications
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SL2101
DS5526
SL2100
preamplifier at 15 GHz
BB555
SL2100
SL2101
30572
ipip3
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DIM1800ESM12-A000
Abstract: No abstract text available
Text: DIM1800ESM12-A000 DIM1800ESM12-A000 Single Switch IGBT Module Preliminary Information DS5529-1.3 April 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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DIM1800ESM12-A000
DS5529-1
DIM1800ESM12-A000
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DCR840F
Abstract: DCR840F42 DCR840F44 DCR840F46 DCR840F48
Text: DCR840F DCR840F Phase Control Thyristor Preliminary Information Replaces February 2002, version DS5521-1.1 DS5521-2.0 June 2002 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 4800V ■ High Surge Capability IT AV 840A ITSM 12,500A dVdt* 1000V/µs dI/dt
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DCR840F
DS5521-1
DS5521-2
DCR840F48
DCR840F46
DCR840F44
DCR840F42
100mA,
DCR840F
DCR840F42
DCR840F44
DCR840F46
DCR840F48
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Untitled
Abstract: No abstract text available
Text: DIM800DDM12-A000 Dual Switch IGBT Module Replaces DS5528-3.0 DS5528-4 October 2009 LN26748 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max)
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DIM800DDM12-A000
DS5528-3
DS5528-4
LN26748)
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bi-directional switches IGBT
Abstract: 3,3 kw high frequency transistor module bidirectional switch igbt matrix converter basic ac motor reverse forward electrical diagram DIM400PBM17-A000 DS-5524
Text: DIM400PBM17-A000 DIM400PBM17-A000 IGBT Bi-Directional Switch Module Preliminary Information Replaces issue June 2002, version DS5524-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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DIM400PBM17-A000
DS5524-2
bi-directional switches IGBT
3,3 kw high frequency transistor module
bidirectional switch igbt matrix converter
basic ac motor reverse forward electrical diagram
DIM400PBM17-A000
DS-5524
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Untitled
Abstract: No abstract text available
Text: DCR840F DCR840F Phase Control Thyristor Preliminary Information Replaces February 2002, version DS5521-1.1 DS5521-2.0 June 2002 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 4800V IT AV 840A ITSM 12,500A dVdt* 1000V/µs ■ High Power Converters dI/dt
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DCR840F
DS5521-1
DS5521-2
000V/Â
DCR840F48
DCR840F46
DCR840F44
DCR840F42
100mA,
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Untitled
Abstract: No abstract text available
Text: DCR840F DCR840F Phase Control Thyristor Preliminary Information Replaces February 2002, version DS5521-1.1 DS5521-2.0 June 2002 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 4800V ■ High Surge Capability IT AV 840A ITSM 12,500A dVdt* 1000V/µs dI/dt
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DCR840F
DS5521-1
DS5521-2
DCR840F48
DCR840F46
DCR840F44
DCR840F42
100mA,
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Thyristor 470 A
Abstract: DCR840F DCR840F42 DCR840F44 DCR840F46 DCR840F48
Text: DCR840F DCR840F Phase Control Thyristor Preliminary Information Replaces February 2002, version DS5521-1.1 DS5521-2.0 June 2002 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 4800V IT AV 840A ITSM 12,500A dVdt* 1000V/µs ■ High Power Converters dI/dt
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DCR840F
DS5521-1
DS5521-2
DCR840F48
DCR840F46
DCR840F44
DCR840F42
100mA,
Thyristor 470 A
DCR840F
DCR840F42
DCR840F44
DCR840F46
DCR840F48
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bi-directional switches IGBT
Abstract: DIM800DDM12-A000 12V15V
Text: DIM800DDM12-A000 DIM800DDM12-A000 Dual Switch IGBT Module Replaces July 2002, version DS5528-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5528-3.0 March 2003
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DIM800DDM12-A000
DS5528-2
DS5528-3
3300arantee
bi-directional switches IGBT
DIM800DDM12-A000
12V15V
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Untitled
Abstract: No abstract text available
Text: SL2101 Synthesised broadband converter with programmable power Datasheet DS5526 Features • • • • • • • • • • Single chip synthesised broadband solution Compatible with both up converter and downconverter requirements in double conversion tuner applications
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SL2101
DS5526
SL2100
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BB555
Abstract: SL2100 SL2101 "10297" transformer
Text: SL2101 Synthesised broadband converter with programmable power Datasheet DS5526 Features • • • • • • • • • • Single chip synthesised broadband solution Compatible with both up converter and downconverter requirements in double conversion tuner applications
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SL2101
DS5526
SL2100
BB555
SL2100
SL2101
"10297" transformer
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LVCMOS18
Abstract: vqg44 AEC-Q100 LVCMOS15 LVCMOS25 LVCMOS33 XA2C32A XAPP427
Text: XA2C32A CoolRunner-II Automotive CPLD R DS552 v1.1 May 5, 2007 Product Specification Features Description • AEC-Q100 device qualification and full PPAP support available in both I-grade and extended temperature Q-grade • Guaranteed to meet full electrical specifications over
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XA2C32A
DS552
AEC-Q100
44-pin
IEEE1149
TestP389:
XAPP399:
LVCMOS18
vqg44
LVCMOS15
LVCMOS25
LVCMOS33
XAPP427
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DS7524
Abstract: DS7524N DS7520N DS5534J DS7528 DS5524J DS7522N DS5534 057524 DS7520
Text: Magnetic Memory Interface Circuits DS5520/DS7520 Series Dual Core Memory Sense Amplifiers General Description The devices in th is series Features of dual • High speed co re sense am p lifiers co n ve rt b ip o lar m illivolt-level m em o ry ■ G u aran teed n a rro w thresho ld u n c e rta in ty over
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OCR Scan
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DS5520/DS7520
uncertaintyDSSS20.
OS7S20
2/osi52?
DS7524
DS7524N
DS7520N
DS5534J
DS7528
DS5524J
DS7522N
DS5534
057524
DS7520
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