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    DS3625 Search Results

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    DS3625 Price and Stock

    Flip Electronics MMDS36254HT1

    TELECOM IC
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    DigiKey MMDS36254HT1 Bulk 7,000 100
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    NXP Semiconductors MMDS36254HT1

    ADAM - ADVANCED DOHERTY ALIGNMEN
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    DigiKey MMDS36254HT1 Reel 1,000
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    Avnet Americas MMDS36254HT1 Reel 12 Weeks 1,000
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    Newark MMDS36254HT1 Bulk 1,000
    • 1 $10.87
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    Richardson RFPD MMDS36254HT1 1,000
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    Avnet Silica MMDS36254HT1 14 Weeks 1,000
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    Flip Electronics MMDS36254HT1 7,721
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    Square D by Schneider Electric JDS36250

    Molded Case Circuit Breaker 600V 250A | Square D JDS36250
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    RS JDS36250 Bulk 2 Weeks 1
    • 1 $5011.34
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    Square D by Schneider Electric JDS36250T

    Molded Case Circuit Breaker 600V 250A | Square D JDS36250T
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    RS JDS36250T Bulk 5 Weeks 1
    • 1 $5011.34
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    Square D by Schneider Electric JDS36250UARD20

    Molded Case Circuit Breaker 600V 250A | Square D JDS36250UARD20
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS JDS36250UARD20 Bulk 5 Weeks 1
    • 1 $6165.28
    • 10 $5857.02
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    Find more DS3625 price and stock on Findchips.com

    DS3625 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DS3625N National Semiconductor Dual High-Speed TRI-State MOS to TTL Level Converters Original PDF

    DS3625 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SL360G

    Abstract: plessey SL360
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3625 - 1.1 SL360G & SL362C HIGH PERFORMANCE NPN DUAL TRANSISTOR ARRAYS The SL360G and SL362C are high performance NPN dual transistor arrays fabricated as monolithic silicon devices.


    Original     		PDF DS3625 SL360G SL362C SL360G SL362C 60MHz) plessey SL360

    SL362

    Abstract: SL362C SL360 SL360G
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3625 - 1.1 SL360G & SL362C HIGH PERFORMANCE NPN DUAL TRANSISTOR ARRAYS The SL360G and SL362C are high performance NPN dual transistor arrays fabricated as monolithic silicon devices.


    Original     		PDF DS3625 SL360G SL362C SL360G SL362C 60MHz) SL362 SL360

    plessey SL360

    Abstract: SL360G SL360 SL362 SL362C cm8 transistor
    Text: ADVANCE INFORMATION DS3625 - 1.1 SL360G & SL362C HIGH PERFORMANCE NPN DUAL TRANSISTOR ARRAYS The SL360G and SL362C are high performance NPN dual transistor arrays fabricated as monolithic silicon devices. They feature accurate parameter matching and close thermal


    Original     		PDF DS3625 SL360G SL362C SL360G SL362C 60MHz) SL360 SL362 SL360) plessey SL360 cm8 transistor

    MKP9V130

    Abstract: MKP9V240 MKP9V270 Application motorola
    Text: ‘T1+’’I’J-MT2 PLASTIC SIDAC t!4KH-1 VOLTAGE BILATERAL TRIGGER — l-m-l VOLTAGE ‘TRIGGERS . . . designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on-state. Conduction will continue like an SCR until the main terminal current


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN10H120SFG 100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI RDS ON max ID max TA = +25°C • • 110mΩ @ VGS = 10V 3.8 A • 122mΩ @ VGS = 6.0V 3.6 A • • • V(BR)DSS 100V Features and Benefits Low RDS(ON) – ensures on state losses are minimized


    Original     		PDF DMN10H120SFG AEC-Q101 DS36250

    m.a english final 2013

    Abstract: BZT52-B15L
    Text: BZT52B15LP SURFACE MOUNT PRECISION ZENER DIODE Features Mechanical Data • Small Leadless Surface Mount Package   Ideally Suited for Automated Assembly Processes   Tight Tolerance on Zener Breakdown Voltage ±2%  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)


    Original     		PDF BZT52B15LP X1-DFN1006-2 J-STD-020 MIL-STD-202, X1-DFN1006-2 DS36252 m.a english final 2013 BZT52-B15L

    Untitled

    Abstract: No abstract text available
    Text: DESD5V0S1BLP3 NEW PRODUCT NEW PRODUCT LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Features Mechanical Data • Ultra-Small, Low Profile Leadless Surface Mount Package 0.6 *  0.3 * 0.3mm   IEC 61000-4-2 (ESD): Air – ±30kV, Contact – ±30kV  1 Channel of ESD Protection


    Original     		PDF X3-DFN0603-2 J-STD-020 MIL-STD-202, DS36257

    Untitled

    Abstract: No abstract text available
    Text: DMN10H120SFG 100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits RDS ON max ID max TA = +25°C •  110mΩ @ VGS = 10V 3.4 A  122mΩ @ VGS = 6.0V 3.2 A    V(BR)DSS 100V Low RDS(ON) – ensures on state losses are minimized


    Original     		PDF DMN10H120SFG AEC-Q101 DS36250

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: transistor 3609 All in one TRANSISTOR REPLACEMENT GUIDE SL362 plessey SL360 SL362CCM SL360 SL362C SL360G
    Text: Obsolescence Notice This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete_products/ ADVANCE INFORMATION


    Original     		PDF DS3625 SL360G SL362C SL360G SL362C 60MHz) TRANSISTOR REPLACEMENT GUIDE transistor 3609 All in one TRANSISTOR REPLACEMENT GUIDE SL362 plessey SL360 SL362CCM SL360

    Untitled

    Abstract: No abstract text available
    Text: AH1889 HIGH SENSIVITY DUAL UNIPOLAR HALL-EFFECT SWITCH Description Pin Assignments AH1889 is a high sensitivity dual output Unipolar Hall effect IC which can detect either a North or South pole independently and switch one of its two outputs with internal pull up and pull down capability. The


    Original     		PDF AH1889 AH1889 OT553 DS36256

    Untitled

    Abstract: No abstract text available
    Text: DMN25D0UFA 25V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • 0.4mm ultra low profile package for thin application 0.32A • • 0.48mm package footprint, 16 times smaller than SOT23 Low VGS th , can be driven directly from a battery 0.28A • Low RDS(on)


    Original     		PDF DMN25D0UFA AEC-Q101 X2-DFN0806-3 DS36253

    DS7802J

    Abstract: 0588 8T25 DS8802J DS7806J DS7802 OS88
    Text: DS3625, DS7802/DS8802, DS7806/DS8806 Am National Sem iconductor MOS Memory Interface Circuits DS3625, DS7802/DS8802, DS7806/DS8806 Dual High Speed TRI-STATE MOS to TTL Level Converters General Description Features T h e D S 3 6 2 5 , D S 7 8 0 2 /D S 8 8 0 2 , D S 7 8 0 6 /D S 8 8 0 6


    OCR Scan     		PDF DS3625, DS7802/DS8802, DS7806/DS8806 DS7802J 0588 8T25 DS8802J DS7806J DS7802 OS88

    MM4220DF/MM5220DF

    Abstract: mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061
    Text: Edge Index by Product Family NATIONAL This is National's first Memory handbook containing information on MOS and Bipolar Memory Components, Systems, Application Notes and Support Circuits. For detailed information on Interface Circuits and other major product lines, contact a National sales office, representative, or distributor.


    OCR Scan     		PDF 360746lat MM4220DF/MM5220DF mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061

    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


    OCR Scan     		PDF DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401