transistor marking p02
Abstract: DN050S DP050S CODE P02
Text: DP050S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.08V Typ. @IC /IB =-100mA/-10mA) • Suitable for low voltage large current drivers • Complementary pair with DN050S • Switching Application
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DP050S
-100mA/-10mA)
DN050S
OT-23F
KST-2116-000
-100mA
-500mA
-100mA,
transistor marking p02
DN050S
DP050S
CODE P02
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DN050S
Abstract: DP050S
Text: DN050S NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.07V Typ. @IC/IB=100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP050S • Switching Application. PIN Connection
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DN050S
100mA/10mA)
DP050S
OT-23F
KSD-T5C073-000
DN050S
DP050S
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N02 Transistor
Abstract: N02 npn DN050S DP050S N02 MARKING N02
Text: DN050S Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.07V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP050S • Switching Application.
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PDF
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DN050S
100mA/10mA)
DP050S
OT-23F
KST-2115-000
100mA
500mA
100mA,
N02 Transistor
N02 npn
DN050S
DP050S
N02 MARKING N02
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DP050S
Abstract: SRC1204S kst60
Text: SUT520J Semiconductor Epitaxial Planar Type Silicon Transistor Description • Power management dual transistors Features • SRC1204S and DP050S in a SOT-363 package. • Power switching circuit in a single package. Ordering Information Type NO. SUT520J
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SUT520J
SRC1204S
DP050S
OT-363
OT-363
KST-6013-000
kst60
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Untitled
Abstract: No abstract text available
Text: DN050S NPN Silicon Transistor Features • Ext rem ely low collect or- t o- em it t er sat urat ion volt age VCE( SAT = 0.07V Typ. @I C/ I B= 100m A/ 10m A) • Suit able for low volt age large current drivers • Com plem ent ary pair wit h DP050S • Swit ching Applicat ion.
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DN050S
DP050S
KSD-T5C073-000
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