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Diodes Incorporated DMG4812SSS-13 MOSFET N-CH 30V 8A 8SO
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DigiKey	DMG4812SSS-13	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	DMG4812SSS-13	Digi-Reel			1	1 $0.49 10 $0.49 100 $0.49 1000 $0.49 10000 $0.49	Buy Now
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Bristol Electronics	DMG4812SSS-13		4,608			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Others DMG4812SSS-13 INSTOCK
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Chip 1 Exchange	DMG4812SSS-13		472			1 - 10 - 100 - 1000 - 10000 -	Get Quote

DMG4812SSS Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
DMG4812SSS		Diodes	N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE		Original	PDF
DMG4812SSS-13		Diodes	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8A SO-8		Original	PDF

DMG4812SSS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
G4812SS Abstract: DMG4812SSS Text: DMG4812SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary V BR DSS Features • ID max RDS(on) TA = 25°C 15mΩ @ VGS= 10V 10.7A 18.5mΩ @ VGS= 4.5V 9.6A 30V • • • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:	Original	PDF	DMG4812SSS AEC-Q101 DS35071 G4812SS DMG4812SSS
g4812ss Abstract: DMG4812SSS Text: DMG4812SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary V BR DSS Features • ID max RDS(on) TA = 25°C 15mΩ @ VGS= 10V 10.7A 18.5mΩ @ VGS= 4.5V 9.6A 30V • • • • DIOFET utilizes a unique patented process to monolithically	Original	PDF	DMG4812SSS AEC-Q101 DS35071 g4812ss DMG4812SSS
G4812SS Abstract: No abstract text available Text: DMG4812SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary Features • This new generation MOSFET has been designed to minimize the onstate resistance RDS(on and yet maintain superior switching performance, making it ideal for high efficiency power management	Original	PDF	DMG4812SSS DS35071 G4812SS
G4812SS Abstract: No abstract text available Text: DMG4812SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Product Summary V BR DSS • ID max RDS(on) TA = 25°C 15mΩ @ VGS= 10V 10.7A 18.5mΩ @ VGS= 4.5V 9.6A 30V • • • • DIOFET utilizes a unique patented process to monolithically	Original	PDF	DMG4812SSS DS35071 G4812SS
DMN62D4SDW-7 Abstract: ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information DMG2307L Analog devices marking Information Analog devices marking DMN2027USS-13 a/ANALOG DEVICES ASSEMBLY DATE CODE TL432BSA-7 DJT4031N Text: DATE: 29th April, 2013 PCN #: 2094 – Rev01 PCN Title: Qualification of "Diodes Technology Cheng Du Company Limited" (DTC) as an Additional Assembly & Test Site for SOP-8, SOT-23, SOT223, SOT-323, SOT-363, SSOT-23, and SOD-323 Packaged Parts,	Original	PDF	Rev01 OT-23, OT223, OT-323, OT-363, SSOT-23, OD-323 PCN-2061 PCN-2070. OD-323 DMN62D4SDW-7 ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information DMG2307L Analog devices marking Information Analog devices marking DMN2027USS-13 a/ANALOG DEVICES ASSEMBLY DATE CODE TL432BSA-7 DJT4031N
AP3039AM Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)	Original	PDF	2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502