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Catalog Datasheet	MFG & Type	PDF	Document Tags
marking YJ transistors Abstract: IEC134 PTB42001X PTB42002X Text: 1 - 3 3 - 0 / PTB42001X _ PHILIPS INTERNATIONAL SbE D • J[PTB42 711DflSfc, DD4L444 fill ■ P H I N MICROWAVE POWER TRANSISTORS N PN silicon transistors for use in common-base class-B power amplifiers up to 4.2 GHz. Diffused emitter ballasting resistors, interdigltated structure, multicell geometry, localized thick oxide	OCR Scan	PDF	PTB42001X PTB42002X PTB42001X PTB42002X Zq-50 marking YJ transistors IEC134

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marking YJ transistors

Abstract: IEC134 PTB42001X PTB42002X
Text: 1 - 3 3 - 0 / PTB42001X _ PHILIPS INTERNATIONAL SbE D • J[PTB42 711DflSfc, DD4L444 fill ■ P H I N MICROWAVE POWER TRANSISTORS N PN silicon transistors for use in common-base class-B power amplifiers up to 4.2 GHz. Diffused emitter ballasting resistors, interdigltated structure, multicell geometry, localized thick oxide

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PTB42001X PTB42002X PTB42001X PTB42002X Zq-50 marking YJ transistors IEC134