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    HGTG30N120E2

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR iti m a r r is SbE D • 43DE271 DD4224S ÖDS H H A S H G T G 3 0 N 12 0 E 2 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistor IGBT August 1991 Package Features ^ "3 9 ^ 3 / • 50 Amp 1200 Volt • Latch Free Operation


    OCR Scan     		43DE271 DD4224S 580ns HGTG30N120E2 PDF