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    DBD10G Search Results

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    DBD10G Price and Stock

    onsemi DBD10G-E

    BRIDGE RECT 1PHASE 600V 1A
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    DigiKey DBD10G-E Ammo Pack
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    Arrow Electronics DBD10G-E 45 99 Weeks 70
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    Rochester Electronics DBD10G-E 2,863 1
    • 1 $0.3792
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    Rochester Electronics LLC DBD10G-E

    SINGLE-PHASE BRIDGE RECTIFIER
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    DigiKey DBD10G-E Bulk 761
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    Rochester Electronics LLC DBD10G-TM-E

    BRIDGE RECTIFIER DIODE, 1A, 600V
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    DigiKey DBD10G-TM-E Bulk 761
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    onsemi DBD10G-TM-E

    BRIDGE RECT 1PHASE 600V 1A
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    DigiKey DBD10G-TM-E Reel
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    Rochester Electronics DBD10G-TM-E 13,672 1
    • 1 $0.3792
    • 10 $0.3792
    • 100 $0.3564
    • 1000 $0.3223
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    DBD10G Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DBD10G Sanyo Semiconductor Diffused Junction Silicon Diode 1.0A Single-Phase Original PDF
    DBD10G-E ON Semiconductor Discrete Semiconductor Products - Diodes - Bridge Rectifiers - BRIDGE RECT 1PHASE 600V 1A Original PDF
    DBD10G-E SANYO Electric Bridge Rectifiers, Discrete Semiconductor Products, DIODE BRIDGE 1PH 1A 600V SIP Original PDF
    DBD10G-E Sanyo Semiconductor DIODE RECTIFIER BRIDGE SINGLE 600V 1A 4DIP4 Original PDF
    DBD10G-TM-E ON Semiconductor Discrete Semiconductor Products - Diodes - Bridge Rectifiers - BRIDGE RECT 1PHASE 600V 1A Original PDF
    DBD10G-TM-E SANYO Electric Bridge Rectifiers, Discrete Semiconductor Products, DIODE BRIDGE 1PH 1A 600V 4SMD Original PDF

    DBD10G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN7030B DBD10G 1.0A Single-Phase Bridge Rectifier Electrical Connection Features Plastic molded structure • Peak reverse voltage : VRM=600V • Average output current : IO=1.0A • http://onsemi.com - + ~ ∼ Specifications Absolute Maximum Ratings at Ta=25°C


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    PDF EN7030B DBD10G A7030-2/2

    dbd10g

    Abstract: No abstract text available
    Text: Ordering number : ENN7030A DBD10 Diffused Junction Silicon Diode DBD10 1.0A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200V, 600V. Average rectified current : IO=1.0A. unit : mm


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    PDF ENN7030A DBD10 DBD10] DBD10-TM max15° dbd10g

    DBD10

    Abstract: DBD10C DBD10G
    Text: Ordering number : ENN7030A DBD10 Diffused Junction Silicon Diode DBD10 1.0A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200V, 600V. Average rectified current : IO=1.0A. unit : mm


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    PDF ENN7030A DBD10 DBD10] DBD10-TM max15° DBD10 DBD10C DBD10G

    DBD10G

    Abstract: DBD10 DBD10C 70302 N0901
    Text: 注文コード No. N 7 0 3 0 A DBD10 三洋半導体データシート 半導体ニューズ No.7030 とさしかえてください。 DBD10 特長 シリコン拡散接合形 1.0A 単相ブリッジ整流素子 ・樹脂モールド構造。 ・せん頭逆電圧:VRM=200V, 600V。


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    PDF DBD10 DBD10C DBD10G max15° SANYODBD10-TM N0901 DBD10G DBD10 DBD10C 70302

    DBD10G

    Abstract: DBD10 DBD10C 70302
    Text: 注文コード No. N 7 0 3 0 A DBD10 三洋半導体データシート 半導体ニューズ No.7030 とさしかえてください。 DBD10 特長 シリコン拡散接合形 1.0A 単相ブリッジ整流素子 ・樹脂モールド構造。 ・せん頭逆電圧:VRM=200V, 600V。


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    PDF DBD10 DBD10C DBD10G max15° SANYODBD10-TM N0901 DBD10G DBD10 DBD10C 70302

    DBD10G

    Abstract: bridge RECTIFIER GI DBD10 DBD10C
    Text: Ordering number : ENN7030A DBD10 Diffused Junction Silicon Diode DBD10 1.0A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200V, 600V. Average rectified current : IO=1.0A. unit : mm


    Original
    PDF ENN7030A DBD10 DBD10] DBD10-TM max15° DBD10G bridge RECTIFIER GI DBD10 DBD10C

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN7030A DBD10 Diffused Junction Silicon Diode DBD10 1.0A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200V, 600V. Average rectified current : IO=1.0A. unit : mm


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    PDF ENN7030A DBD10 DBD10] DBD10-TM max15Â

    DBC10

    Abstract: DBD10G-E D2005 DBC10C DBC10E DBC10G DBD10C-E
    Text: Ordering number : E I 0 0 0 8 Announcement Concerning the Discontinuation of Certain Diode Products Thank you for using SANYO semiconductor products. The following SANYO semiconductor products are being discontinued. Please make a note of this if you use these or related products.


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    PDF DBC10C DBC10E DBC10G DBC10 DBD10C-E DBD10G-E D2005 DBC10C DBC10E DBC10G DBD10C-E

    DBD10

    Abstract: DBD10C DBD10G
    Text: Ordering number : ENN7030 DBD10 Diffused Junction Silicon Diode DBD10 1.0A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200V, 600V. Average rectified current : IO=1.0A. unit : mm


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    PDF ENN7030 DBD10 DBD10] DBD10-TM max15° DBD10 DBD10C DBD10G