DB2J411 Search Results

DB2J411 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
DB2J41100L		Panasonic Electronic Components	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 40V 1A SMINI2		Original	PDF

DB2J411 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
DB2J411 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . DB2J411 Silicon epitaxial planar type For rectiﬁcation • Package  Features  Short reverse recovery time trr  Low forward voltage VF and small reverse current IR  Contributes to miniaturization of sets, reduction of component count.	Original	2002/95/EC) DB2J411 DB2J411	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . DB2X411 Silicon epitaxial planar type For rectiﬁcation DB2J411 in Mini2 type package • Package  Features  Short reverse recovery time trr  Low forward voltage VF and small reverse current IR	Original	2002/95/EC) DB2X411 DB2J411	PDF
DB2J411 Abstract: ZKH00272BED Text: This product complies with the RoHS Directive EU 2002/95/EC . DB2J411 Silicon epitaxial planar type For rectiﬁcation • Features  Package  Packaging  Code SMini2-F5-B  Pin Name 1: Cathode 2: Anode  Low forward voltage VF and small reverse current IR	Original	2002/95/EC) DB2J411 DB2J411 ZKH00272BED	PDF
Untitled Abstract: No abstract text available Text: Doc No. TT4-EA-13100 Revision . 2 Product Standards Schottky Barrier Diode DB5H411K0L DB5H411K0L Silicon epitaxial planar type Unit: mm For high frequency rectification DB2J411 in WSMini5 type package 2.0 0.2 5 0.13 4 • Features 1.7 2.1  Low forward voltage and low reverse leakage current	Original	TT4EA-13100 DB5H411K0L DB2J411 UL-94 DB2J411	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . DB5H411K Silicon epitaxial planar type For high frequency ampliﬁcation DB2J411 in WSMini5 type package • Features  Package  Low forward voltage VF and small reverse current IR  Short reverse recovery time trr	Original	2002/95/EC) DB5H411K DB2J411 DB2J411	PDF
Untitled Abstract: No abstract text available Text: Doc No. TT4-EA-13670 Revision. 3 Product Standards Schottky Barrier Diode DB2X41100L DB2X41100L Silicon epitaxial planar type Unit: mm For rectification DB2J411 in Mini2 type package 1.6 0.13 2 • Features 2.6 3.5  Low forward voltage and low reverse leakage current	Original	TT4-EA-13670 DB2X41100L DB2J411 UL-94	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . DB2J411 (Tentative) Silicon epitaxial planar type For rectiﬁcation • Package  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VR 40 V IF(AV) 1 A IFSM 3 A Junction temperature	Original	2002/95/EC) DB2J411	PDF
ma3df25 Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01 Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01	PDF
MN864779 Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY Text: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.	Original	A000021E MN864779 MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY	PDF