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Panasonic Electronic Components DB2141200L DIODE SCHOT 40V 1.5A SMINI2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DB2141200L	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.08604	Buy Now
Avnet Abacus	DB2141200L			143 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
ROHM Semiconductor DB2141200L Diode Schottky 1.5A 2-Pin SC-108A T/R (Alt: DB2141200L)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Asia	DB2141200L			24 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.01948	Buy Now

DB21412 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
DB2141200L		Panasonic	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 40V 1.5A SMINI2		Original	PDF

DB21412 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . DB21412 Silicon epitaxial planar type For rectiﬁcation • Features  Package  Low forward voltage VF and small reverse current IR  Forward current (Average) IF(AV) = 1.5 A rectiﬁcation is possible	Original	PDF	2002/95/EC) DB21412
DB2141200L Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . DB21412 Silicon epitaxial planar type For rectiﬁcation • Features  Package  Low forward voltage VF and small reverse current IR  Forward current (Average) IF(AV) = 1.5 A rectiﬁcation is possible	Original	PDF	2002/95/EC) DB21412 DB2141200L
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . DB21412 Silicon epitaxial planar type For rectiﬁcation • Features  Package  Low forward voltage VF and small reverse current IR  Forward current (Average) IF(AV) = 1.5 A rectiﬁcation is possible	Original	PDF	2002/95/EC) DB21412
Untitled Abstract: No abstract text available Text: Doc No. TT4-EA-13679 Revision. 3 Product Standards Schottky Barrier Diode DB2141200L DB2141200L Silicon epitaxial planar type Unit: mm 1.25 0.6 For rectification 0.12 2 • Features 1.9 2.5  Low forward voltage and small reverse leakage current  Forward current Average IF(AV) = 1.5 A rectification is possible	Original	PDF	TT4-EA-13679 DB2141200L UL-94
ma3df25 Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01 Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	PDF	respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
MN864779 Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY Text: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.	Original	PDF	A000021E MN864779 MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
smini2-f4-b Abstract: mini2-f3-b Mini2-F4-B Text: High performance SBD series with fine diffusion process Low VF Schottky barrier diode Unit ： mm 0.80 ± 0.05 1.60 ± 0.10 +0.02 0.80 ±0.10 0.58 -0.03 1 ※Junction Barrier Schottky 2 2 0.30 ±0.10 0.60 ±0.10 3.50 ± 0.10 2.60 ± 0.10 7° 5° 1.90 ±0.10	Original	PDF	DB2W318 DB2X414 DB24416 smini2-f4-b mini2-f3-b Mini2-F4-B