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Catalog Datasheet	Type	Document Tags	PDF
BUK655-500B Abstract: T0220AB Text: P H ILIPS bSE D INTER NAT ION AL ES 7 1 1 0 6 2 b D0bH31b TTö • PHIN Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET G EN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.	OCR Scan	BUK655-500B T0220AB dSiV-100/ /C-156	PDF

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BUK655-500B

Abstract: T0220AB
Text: P H ILIPS bSE D INTER NAT ION AL ES 7 1 1 0 6 2 b D0bH31b TTö • PHIN Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET G EN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.

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BUK655-500B T0220AB dSiV-100/ /C-156

PDF